Art

J-GLOBAL ID：201402289239231030   Reference number：14A0869855

Electronic structure of Eu²⁺-doped SrAl₂O₄ using modified Becke-Johnson exchange potential

Becke-Johnson交換ポテンシャルを用いたEu²⁺ドープSrAl₂O₄の電子構造

Author (8)： OBUKURO Yuki (Kyushu Inst. of Technol. (KIT),Fukuoka, JPN) ,  MATSUSHIMA Shigenori (Kyushu Inst. of Technol. (KIT),Fukuoka, JPN) ,  MATSUSHIMA Shigenori (Kitakyushu National Coll. of Technol. (KCT), Fukuoka, JPN) ,  NAKAMURA Hiroyuki (Kitakyushu National Coll. of Technol. (KCT), Fukuoka, JPN) ,  ARAI Masao (National Inst. of Materials Sci. (NIMS), Ibaraki, JPN) ,  YAMADA Hiroshi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Saga, JPN) ,  XU Chao-Nan (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Saga, JPN) ,  XU Chao-Nan (Kyushu Univ., Fukuoka, JPN)
Material： Solid State Communications  (Solid State Commun)
Volume： 186  Page： 46-49  Publication year： May. 2014 
JST Material Number： H0499A  ISSN： 0038-1098  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： potential ,  *ab initio method ,  *electronic structure ,  Europium ,  *strontium compound ,  aluminum compound ,  oxide ,  doping ,  state density ,  band gap ,  *aluminate ,  *strontium aluminate ,  indirect band gap
Semi thesaurus term： Becke-Johnson交換ポテンシャル

JST classification (1)： Electronic structure of crystalline insulators  (BM02070Y)

Terms in the title (2)： ドープ ,  電子構造