Art

J-GLOBAL ID：201402298616443101   Reference number：14A0837761

Development of Nuclear Radiation Detectors by Use of Thick Single-Crystal CdTe Layers Grown on (211) p ⁺-Si Substrates by MOVPE

(211)p⁺-Si基板上にMOVPEで成長させた厚い単結晶CdTe層を用いた核放射線検出器の開発

Author (10)： YASUDA K. (Nagoya Inst. of Technol., Graduate School of Engineering, Gokiso, Showa, 466-8555, Nagoya, JPN) ,  NIRAULA M. (Nagoya Inst. of Technol., Graduate School of Engineering, Gokiso, Showa, 466-8555, Nagoya, JPN) ,  WAJIMA Y. (Nagoya Inst. of Technol., Graduate School of Engineering, Gokiso, Showa, 466-8555, Nagoya, JPN) ,  YAMASHITA H. (Nagoya Inst. of Technol., Graduate School of Engineering, Gokiso, Showa, 466-8555, Nagoya, JPN) ,  TAKAI N. (Nagoya Inst. of Technol., Graduate School of Engineering, Gokiso, Showa, 466-8555, Nagoya, JPN) ,  SUZUKI Y. (Nagoya Inst. of Technol., Graduate School of Engineering, Gokiso, Showa, 466-8555, Nagoya, JPN) ,  MATSUMOTO M. (Nagoya Inst. of Technol., Graduate School of Engineering, Gokiso, Showa, 466-8555, Nagoya, JPN) ,  TSUKAMOTO Y. (Nagoya Inst. of Technol., Graduate School of Engineering, Gokiso, Showa, 466-8555, Nagoya, JPN) ,  TSUKAMOTO Y. (Nagoya Inst. of Technol., Graduate School of Engineering, Gokiso, Showa, 466-8555, Nagoya, JPN) ,  AGATA Y. (Nagoya Inst. of Technol., Graduate School of Engineering, Gokiso, Showa, 466-8555, Nagoya, JPN)
Material： Journal of Electronic Materials  (J Electron Mater)
Volume： 43  Issue： 8  Page： 2860-2863  Publication year： Aug. 2014 
JST Material Number： D0277B  ISSN： 0361-5235  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *cadmium telluride ,  *radiation detector ,  *MOCVD ,  silicon ,  epitaxy ,  pixel ,  heterojunction ,  interface(surface) ,  positive hole ,  energy resolving power ,  ohmic contact
Semi thesaurus term： *metal organic vapor phase epitaxy ,  epitaxial growth ,  silicon ,  charge transport

JST classification (3)： Radiation detection and detectors  (AD08020J) ,  Semiconductor-semiconductor contacts without Gr.13-15 element compounds  (BM03083P) ,  Semiconductor thin films  (BK14040E)

Terms in the title (6)： MOVPE ,  成長 ,  単結晶 ,  核 ,  放射線検出器 ,  開発