Research field (5)：
Electronic devices and equipment
, Semiconductors, optical and atomic physics
, Thin-film surfaces and interfaces
, Crystal engineering
, Electric/electronic material engineering
Research theme for competitive and other funds (7)：
2023 - 2026 Study on high-K dielectric/regrown nitride semiconductor interfaces for high efficiency and highly-safe transistors
2023 - 2026 Gate insulator deposition process for GaN-based MOS devices using mist-CVD technique
2019 - 2022 Highly Stable Normally-off GaN-based transistors via Structures and Process
2019 - 2022 Surface passivation and insulated gate structures for nitride-based semiconductor devices using mist-CVD method
2019 - 2022 Study on high-voltage and high-power nitrided-based transistor amplifiers operated at quasi-millimeter wave frequencies
2016 - 2019 Study on lateral breakdown field in GaN-based transistors
2015 - 2018 Improving the reliability of GaN HEMTs using MMC structures and free-standing GaN substrates
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Papers (101)：
Toi Nezu, Shogo Maeda, Ali Baratov, Suguru Terai, Kishi Sekiyama, Itsuki Nagase, Masaaki Kuzuhara, Akio Yamamoto, Joel T. Asubar. Effect of Ultra-Thin AlGaN Regrown Layer on the Electrical Properties of ZrO2/AlGaN/GaN Structures. Phys. Status Solidi A. 2024
Shogo Maeda, Shinsaku Kawabata, Itsuki Nagase, Ali Baratov, Masaki Ishiguro, Toi Nezu, Takahiro Igarashi, Kishi Sekiyama, Keito Shinohara, Melvin John, et al. Improved Performance of Normally-off GaN-based MIS-HEMTs with Recessed-gate and Ultrathin Regrown AlGaN Barrier. Journal of Semiconductor Technology and Science. 2024. 24. 1. 25-32
Akio Yamamoto, Ali Baratov, Masaaki Kuzuhara, Joel T Asubar. MOVPE growth of AlGaN on RIE-treated GaN surfaces and its application to AlGaN/GaN electron devices. 2023 IEEE IMFEDK Tech. Dig. 2023. 2023
T Igarashi, S Maeda, A Baratov, JT Asubar, M Kuzuhara. AlGaN/GaN Schottky-Gate HEMTs with low thermal budget V/Al/Mo/Au ohmic contacts. 2023 IEEE IMFEDK Tech. Dig. 2023. 2023
M Ishiguro, S Terai, K Sekiyama, S Urano, A Baratov, JT Asubar, M Kuzuhara. High performance normally-off recessed-gate GaN-based MIS-HEMTs achieved by oxygen plasma treatment. 2023 IEEE IMFEDK Tech. Dig. 2023. 2023. 1
MBE-grown ZnSnAs2 Epitaxial Films: A Ferromagnetic Semiconductor Host Prospect (invited book chapter), “Chalcopyrite: Chemical Composition, Occurrence and Uses”
Nova Science Publishers, Inc., (Hauppauge) New York 2014
Electronics Engineering Reviewer For Today’s ECE Licensure Examination
Padilla Engineering and Review Center Publishing and Tutorial Center 2001
Lectures and oral presentations (200)：
Breaking the trade-off of drain current and threshold voltage in Normally-off GaN-based MIS-HEMTs by state-of-the-art regrowth technology
(第7回有機・無機エレクトロニクスシンポジウム 2024)
Realization of low ohmic contact resistance in AlGaN/GaN HEMTs using V/Al/Mo/Au metal stack
(7th Organic and Inorganic Electronics Symposium: O&I Symposium 2024)
Improving the stability of AlGaN/GaN MIS-HEMTs using ZrO2/Al2O3 multilayer nano-laminate insulators) Suguru Terai, Kishi Sekiyama, Takahiro Igarashi, Rei Kato, Reaz Tanvir Ahmed, Masaaki Kuzuhara, Joel T. Asubar
(7th Organic and Inorganic Electronics Symposium: O&I Symposium 2024)
Interface characterization of regrown-AlGaN/ZrO2 interfaces for Normally-off GaN-based MIS-HEMTs
(WOCSDICE-EXMATEC 2024 2024)
Comparison of electrical properties of AlGaN/GaN MIS-HEMTs with ZrO2/Al2O3 multilayer nano-laminate insulators and conventional Al2O3 and ZrO2 AlGaN/GaN MIS-HEMTs
(令和5年度応用物理学会 北陸・信越支部学術講演会 2023)
2006 - 2009 Nagaoka University of Technology Electrical Engineering PhD in Information Science and Control Engineering
2004 - 2006 Nagaoka University of Technology Electrical Engineering Masters in Electrical, Electronics and Information Engineering
1996 - 1998 Mapua Institute of Technology EE-ECE-CoE Masters in Engineering Major in Electronics
1991 - 1995 Mapua Institute of Technology EE-ECE-CoE BS in Electronics and Communications Engineering
Professional career (1)：
PhD in Information Science and Control Engineering (Nagaoka University of Technology)
Work history (4)：
2019/04 - 現在 University of Fukui Graduate School of Engineering Associate Professor
2014/11 - 2019/03 University of Fukui Tenure-Track Program for Innovative Research Senior Assistant Professor
2010/04 - 2014/10 Hokkaido University Research Center for Integrated Quantum Electronics Post-doctoral Fellow
2009/11 - 2010/03 Nagaoka University of Technology Department of Electrical Engineering Post-doctoral Fellow
Committee career (15)：
2020/04 - 現在 IEEE Electron Devices Society Kansai Chapter Academia Committee Vice Chair
2020 - 現在 The 2021 International Meeting for Future of Electron Devices, Kansai Program Committee Chair
- 現在 2019 International Meeting for Future of Electron Devices Kansai (IMFEDK 2019) Program Committee Member
- 現在 Japanese Society of Applied Physics Member
- 現在 Institute of Electrical and Electronics Engineer Member
- 現在 2018 International Meeting for Future of Electron Devices Kansai Program Committee Member
- 現在 The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017) Program Committee Member
- 現在 2017 International Meeting for Future of Electron Devices Kansai (IMFEDK 2017) Program Committee Member
- 現在 2016 International Meeting for Future of Electron Devices Kansai (IMFEDK 2016) Program Committee Member
- 現在 2016 International Meeting for Future of Electron Devices Kansai (IMFEDK 2016) Program Committee Member
- 現在 2017 International Meeting for Future of Electron Devices Kansai (IMFEDK 2017) Program Committee Member
- 現在 The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017) Program Committee Member
- 現在 2018 International Meeting for Future of Electron Devices Kansai (IMFEDK 2017) Program Committee Member
- 現在 Institute of Electrical and Electronics Engineer Member
- 現在 Japanese Society of Applied Physics Member
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Awards (20)：
2023/09 - Institute of Physics (IOP) Trusted Reviewer Status Award IOP Trusted Reviewer Status Award
2022/04 - Institute of Physics (IOP) Applied Physics Express Outstanding Reviewer Award
2021/12 - American Institute of Physics Most Read Tutorials and Methods from 2021, Journal of Applied Physics Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation
2021/12 - IEEE Included in the 2021 IEEE Electron Device Letters "Golden List of Reviewers"
2020/11 - IEEE EDS Kansai Chapter The 2020 International Meeting for Future of Electron Devices Kansai (IMFEDK 2020) Improved interface of high-K ZrO2 and AlGaN via ex-situ MOVPE regrowth
2019/11 - IEEE EDS Kansai Chapter The 2019 International Meeting for Future of Electron Devices Kansai (IMFEDK 2019) Student Paper Award Study of Luminescence and Leakage Current of AlGaN/GaN HEMTs biased near off-state breakdown
2019/11 - IEEE EDS Kansai Chapter The 2019 International Meeting for Future of Electron Devices Kansai (IMFEDK 2019) Best Paper Award Impact of SiN capping during Ohmic Annealing on Performance of GaN-based HEMTs
2018/12 - IEEE Electron Device Letters Journal Included in the IEEE Electronics Device Letters Golden List of Reviewers for 2018 https://eds.ieee.org/images/files/Publications/EDL_Editor_Pictures/edlgoldenlist.pdf
2018/11 - International Workshop on Nitride Semiconductors Threshold voltage hysteresis in GaN-based vertical Trench MOSFETs Threshold Voltage Hysteresis in GaN-based Vertical Trench MOSFETs
2018/06 - 2018 International Meeting for Future of Electron Devices Kansai (IMFEDK 2018) Student Paper Award Improved Current Collapse in AlGaN/GaN MOS-HEMTs with dual Field-Plates
2017/12 - IEEE Electronics Device Letters Journal Included in the IEEE Electronics Device Letters Golden List of Reviewers for 2017 http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=8103431
2017/06 - The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017) Best Paper Award Enhancement-Mode AlGaN/GaN MOS-HEMTs with Recessed-Gate Structures Exhibiting High Threshold Voltage
2017/06 - 2017 International Meeting for Future of Electron Devices Kansai (IMFEDK 2017) 2017 International Meeting for Future of Electron Devices Kansai (IMFEDK 2017) Effect of Reverse Bias Annealing on the Properties of AlGaN/GaN MIS-HEMTs with Recessed-gate Structure
2016/09 - Japan Society of Applied Physics 2016 Japan Society of Applied Physics Outstanding Paper Award Characterization of electronic states at insulator/(Al)GaN interfaces for improved Insulated gate and surface passivation structures of GaN-based transistors
2016/06 - 2016 International Meeting for Future of Electron Devices Kansai (IMFEDK 2016) Student Paper Award Breakdown degradation of AlGaN/GaN HEMTs with multi-finger gate patterns
2015/06 - 2015 International Meeting for Future of Electron Devices Kansai (IMFEDK 2015) Student Paper Award Improved Current Collapse in AlGaN/GaN HEMTs with 3-Dimensional Field Plate Structure
2013/12 - Japan Society of Applied Physics Hokkaido Chapter Incentive Award Investigation of AlGaN/GaN HEMT Off-state Stress Current Collapse
2008/08 - Japan Society of Applied Physics Hokuriku-Shin Etsu Chapter Incentive Award Growth and Properties of Mn-doped ZnSnAs2 epitaxial films
2008/01 - Institute of Electrical Engineers of Japan(IEEJ) Niigata Chapter Excellent Research Award Interpretation of the Temperature Dependence of the Transport Properties of ZnSnAs2 epitaxial films grown by MBE
2006/01 - Institute of Electrical Engineers of Japan(IEEJ) Niigata Chapter Special Award Effect of Zn Incorporation on the properties of GaMnAs diluted magnetic semiconductor
