Art

J-GLOBAL ID：201502201552938296   Reference number：15A0613285

Evaluation of Accuracy of Charge Pumping Current in Time Domain

時間領域の電荷ポンピング電流の精度評価

Author (5)： WATANABE Tokinobu (Univ. of Toyama) ,  HORI Masahiro (Univ. of Toyama) ,  SARUWATARI Taiki (Univ. of Toyama) ,  TSUCHIYA Toshiaki (Shimane Univ.) ,  ONO Yukinori (Univ. of Toyama)
Material： IEICE Transactions on Electronics (Web)  (IEICE Trans Electron (Web))
Volume： E98.C  Issue： 5  Page： 390-394 (J-STAGE)  Publication year： 2015 
JST Material Number： U0468A  ISSN： 1745-1353  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： excitation(physics) ,  signal characteristic ,  defect ,  MOSFET ,  defect density ,  accuracy ,  electric current ,  *state density
Semi thesaurus term： interface defect ,  interface state ,  interface state density ,  time domain ,  *accuracy assessment ,  *charge pumping

JST classification (2)： Metal-insulator-semiconductor structures  (BM03085X) ,  Measurement,testing and reliability of solid-state devices  (NC03040G)

Reference (30)：

• [1] J. S. Brugler and P. G. A. Jespers, “Charge pumping in MOS devices,” IEEE Trans. Electron. Dev., vol.16, no.3, pp.297–302, Mar. 1969.
• [2] G. Groeseneken, H. E. Maes, N. Beltran, and R. F. De Keersmaecker, “A reliable approach to charge-pumping measurements in MOS transistors,” IEEE Trans. Electron. Dev., vol.31, no.1, pp.42–53, Jan. 1984.
• [3] G. Ghibaudo and N. S. Saks, “A time domain analysis of the charge pumping current,” J. Appl. Phys., vol.64, no.9, pp.4751–4754, Nov. 1988.
• [4] G. Ghibaudo and N. S. Saks, “Investigation of the charge pumping current in metal-oxide-semiconductor structures,” J. Appl. Phys., vol.65, no.11, pp.4311–4318, June 1989.
• [5] M. G. Ancona, N. S. Saks, and D. McCarthy, “Lateral distribution of hot-carrier-induced interface traps in MOSFETs,” IEEE Trans. Electron. Dev., vol.35, no.12, pp.2221–2228, Dec. 1988.

Terms in the title (3)： 時間領域 ,  電荷ポンピング ,  精度評価