Art

J-GLOBAL ID：201502202115933827   Reference number：15A0872946

Equivalent ambipolar carrier injection of electrons and holes with Au electrodes in air-stable field effect transistors

空気安定な電界効果トランジスタにおけるAu電極による電子と正孔の等価な両極性キャリア注入

Author (6)： KANAGASEKARAN Thangavel (WPI-Advanced Inst. for Materials Res. (WPI-AIMR), Tohoku Univ., 2-1-1 Katahira, Aoba, Sendai 980-8577, JPN) ,  SHIMOTANI Hidekazu (Dep. of Physics, Graduate School of Sci., Tohoku Univ., 6-3 Aoba, Aramaki, Aoba, Sendai 980-8578, JPN) ,  IKEDA Susumu (WPI-Advanced Inst. for Materials Res. (WPI-AIMR), Tohoku Univ., 2-1-1 Katahira, Aoba, Sendai 980-8577, JPN) ,  SHANG Hui (Dep. of Physics, Graduate School of Sci., Tohoku Univ., 6-3 Aoba, Aramaki, Aoba, Sendai 980-8578, JPN) ,  KUMASHIRO Ryotaro (WPI-Advanced Inst. for Materials Res. (WPI-AIMR), Tohoku Univ., 2-1-1 Katahira, Aoba, Sendai 980-8577, JPN) ,  TANIGAKI Katsumi (WPI-Advanced Inst. for Materials Res. (WPI-AIMR), Tohoku Univ., 2-1-1 Katahira, Aoba, Sendai 980-8577, JPN)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 107  Issue： 4  Page： 043304-043304-5  Publication year： Jul. 27, 2015 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *FET ,  gold electrode ,  *carrier injection ,  thin film transistor ,  insulating film ,  dielectric thin film ,  silicon dioxide ,  sulfur heterocyclic compound ,  Polymethyl Methacrylate ,  work function ,  metal-semiconductor junction ,  transistor ,  polarity ,  transmission characteristic ,  current-voltage characteristic ,  band structure ,  gate dielectric film ,  both poles ,  Thiophenes
Semi thesaurus term： PMMA ,  gate dielectric ,  Thiophenes ,  field effect transistor ,  light-emitting transistor ,  *organic transistor

JST classification (1)： Transistors  (NC03070N)

Substance index (2)： Tetratetracontane ,  BP2T

Terms in the title (6)： 電界効果トランジスタ ,  Au電極 ,  電子 ,  正孔 ,  両極性 ,  キャリア注入