Art
J-GLOBAL ID：201502205728622831
Reference number：15A0871837
Improvement of Electrical Device Performances for Graphene Directly Grown on a SiO2 Substrate by Plasma Chemical Vapor Deposition
プラズマ化学気相蒸着によるSiO2基板上でのグラフェンの直接成長による電気的装置性能の改善
Author (3)：
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Material：
Volume：
9
Page：
1206079-1206079 (J-STAGE)
Publication year：
2014
JST Material Number：
U0045A
ISSN：
1880-6821
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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,
,
,
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,
JST classification (2)：
JST classification
Category name(code) classified by JST.
Applications of plasma
, Plasma devices
Terms in the title (5)：
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Keywords automatically extracted from the title.
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