Art

J-GLOBAL ID：201502217490271618   Reference number：15A0810582

An Analysis of False Turn-On Mechanism on Semiconductor Devices

半導体デバイスの誤点弧メカニズムに関する解析

Author (5)： NISHIGAKI AKIHIRO (島根大学総合理工学部) ,  UMEGAMI HIROKATSU (島根大学総合理工学部) ,  MISHIMA TAICHI (島根大学総合理工学部) ,  HATTORI FUMIYA (島根大学総合理工学部) ,  YAMAMOTO MASAYOSHI (島根大学総合理工学部)
Material： 電気学会論文誌 C  (IEEJ Transactions on Electronics, Information and Systems)
Volume： 135  Issue： 7  Page： 769-775 (J-STAGE)  Publication year： 2015 
JST Material Number： S0810A  ISSN： 0385-4221  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： JAPANESE (JA)

Abstract/Point： This paper analyzes the gate n...

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Thesaurus term： *semiconductor device ,  *breaking phenomenon ,  gallium nitride ,  silicon carbide ,  power transistor ,  *firing control ,  switching regulator ,  drive
Semi thesaurus term： switching power supply ,  power semiconductor ,  *誤点弧 ,  高周波駆動

JST classification (2)： Power converters  (NB08030B) ,  Transistors  (NC03070N)

Reference (12)：

• (1) K. Watanabe and J. Itoh : “Investigation of the Circuit Parameters Design in a Power Converter by using High-Frequency Power Devices”, Power Electronics and Drive Systems (PEDS), pp. 15-20 (2011)
• (2) Q. Zhao and G. Stojcic : “Characterization of Cdv/dt Induced Power Loss in Synchronous Buck DC-DC Converters”, IEEE Trans. on Power Electronics, Vol. 22, No. 4, pp. 1508-1513 (2007)
• (3) H. Sheng, Y. Pei, and F. Wang : “Impact of Resonant Tank Structures on Transformer Size for a High Power Density Isolated Resonant Converter”, Power Electronics Specialists Conference, Vol. 7, pp. 2975-2981 (2008)
• (4) I. Hwang, J. Oh, H. Choi, J. Kim, H. Choi, J. Kim, S. Chong, J. Shin, and U. Chung : “Source-Connected p-GaN Gate HEMTs for Increased Threshold Voltage”, Electron Device Lett., Vol. 34, No. 5, pp. 605-607 (2013)
• (5) M. Kanamura, T. Ohki, S. Ozaki, M. Nishimori, S. Tomabechi, J. Kotani, T. Miyajima, N. Nakamura, N. Okamoto, T. Kikkawa, and K. Watanabe : “Suppression of Threshold Voltage Shift for Normally-Off GaN MIS-HEMT without Post Deposition Annealing”, Power Semiconductor Devices and ICs (ISPSD), pp. 411-414 (2013)

Terms in the title (4)： 半導体デバイス ,  弧 ,  メカニズム ,  解析