Art

J-GLOBAL ID：201502217669287699   Reference number：15A0112579

半導体デバイスに対する宇宙放射線照射効果

Author (1)： TAKAHASHI YOSHIHIRO (日本大 理工)
Material： 日本信頼性学会誌  (REAJ誌)
Volume： 36  Issue： 8  Page： 460-467  Publication year： Nov. 01, 2014 
JST Material Number： L2778A  ISSN： 0919-2697  Document type： Article
Article type： 解説  Country of issue： Japan (JPN)  Language： JAPANESE (JA)

Thesaurus term： *semiconductor device ,  *cosmic ray ,  *radiation exposure (irradiation) ,  *radiation effect ,  absorbed radiation dose ,  charged particle ,  lattice defect ,  radiation damage ,  SEU ,  soft error ,  latchup ,  interaction ,  radiation resistance (radiation effect) ,  outer space ,  ionization ,  Linear Energy Transfer ,  space environment ,  oxide film ,  electric charge ,  collection ,  energetic particle ,  conversion coating film
Semi thesaurus term： buried oxide

JST classification (1)： Measurement,testing and reliability of solid-state devices  (NC03040G)

Reference (21)：

• J.R. Schwank : Basic Mechanisms of Radiation Effects in the Natural Space Environment, 1994 IEEE NSREC Short Course (1994)
• https://creme.isde.vanderbilt.edu/
• G.P. Summews : Displacement Damage: Mechanisms and Measurements, 1992 IEEE NSREC Short Course (1992)
• J.R. Schwank : Total Dose Effects in MOS Devices, 2002 IEEE NSREC Short Course (2002)
• J.R. Cricchi and D.F. Barde : Compensation of Radiation Effects by Charge Transport in Metal-Nitride-Oxide-Semiconductor Structures, Applied Physics Letters, Vol.19, No.3, pp.49-51(1971)

Terms in the title (3)： 半導体デバイス ,  宇宙放射線 ,  照射効果