Art

J-GLOBAL ID：201502262037870700   Reference number：15A0228378

Deposition and characterization of amorphous aluminum nitride thin films for a gate insulator

ゲート絶縁体のための非晶質窒化アルミニウム薄膜の成膜及び特性評価

Author (16)： OIKAWA H. (Inst. of Materials Sci., Univ. of Tsukuba,1-1-1 Tennoudai, Tsukuba, 305-8573, JPN) ,  OIKAWA H. (Tsukuba Nano-Tech Human Resource Dev. Program, Graduate School of Pure and Applied Sciences, Univ. of Tsukuba, 1-1-1 ...) ,  AKIYAMA R. (Inst. of Materials Sci., Univ. of Tsukuba,1-1-1 Tennoudai, Tsukuba, 305-8573, JPN) ,  AKIYAMA R. (Tsukuba Nano-Tech Human Resource Dev. Program, Graduate School of Pure and Applied Sciences, Univ. of Tsukuba, 1-1-1 ...) ,  KANAZAWA K. (Inst. of Materials Sci., Univ. of Tsukuba,1-1-1 Tennoudai, Tsukuba, 305-8573, JPN) ,  KURODA S. (Inst. of Materials Sci., Univ. of Tsukuba,1-1-1 Tennoudai, Tsukuba, 305-8573, JPN) ,  KURODA S. (Tsukuba Nano-Tech Human Resource Dev. Program, Graduate School of Pure and Applied Sciences, Univ. of Tsukuba, 1-1-1 ...) ,  HARAYAMA I. (Inst. of Applied Physics, Univ. of Tsukuba, 1-1-1 Tennoudai, Tsukuba, 305-8573, JPN) ,  HARAYAMA I. (Tsukuba Nano-Tech Human Resource Dev. Program, Graduate School of Pure and Applied Sciences, Univ. of Tsukuba, 1-1-1 ...) ,  NAGASHIMA K. (Inst. of Applied Physics, Univ. of Tsukuba, 1-1-1 Tennoudai, Tsukuba, 305-8573, JPN) ,  SEKIBA D. (Inst. of Applied Physics, Univ. of Tsukuba, 1-1-1 Tennoudai, Tsukuba, 305-8573, JPN) ,  SEKIBA D. (Tandem Accelerator Complex, Res. Facility Center for Sci. and Technol., Univ. of Tsukuba, 1-1-1 Tennoudai, Tsukuba ...) ,  ASHIZAWA Y. (Coll. of Sci. and Technol., Nihon Univ., 7-24-1 Narashinodai, Funabashi, 274-8501, JPN) ,  TSUKAMOTO A. (Coll. of Sci. and Technol., Nihon Univ., 7-24-1 Narashinodai, Funabashi, 274-8501, JPN) ,  NAKAGAWA K. (Coll. of Sci. and Technol., Nihon Univ., 7-24-1 Narashinodai, Funabashi, 274-8501, JPN) ,  OTA N. (Tsukuba Nano-Tech Human Resource Dev. Program, Graduate School of Pure and Applied Sciences, Univ. of Tsukuba, 1-1-1 ...)
Material： Thin Solid Films
Volume： 574  Page： 110-114  Publication year： Jan. 01, 2015 
JST Material Number： B0899A  ISSN： 0040-6090  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *amorphous state ,  *aluminum nitride ,  *chemical vapor deposition ,  *insulating film ,  dielectric thin film ,  X-ray photoelectron spectrum ,  radiation absorption analysis ,  current-voltage characteristic ,  *leakage current ,  oxidation ,  *gate dielectric film
Semi thesaurus term： reactive deposition ,  elastic recoil detection analysis ,  surface oxidation

JST classification (2)： Thin films of other inorganic compounds  (BK14060A) ,  Transistors  (NC03070N)

Terms in the title (6)： ゲート絶縁体 ,  非晶質 ,  窒化アルミニウム ,  薄膜 ,  成膜 ,  特性評価