Art

J-GLOBAL ID：201502265719932455   Reference number：15A0591159

Photoluminescence signature of resonant energy transfer in ZnO coated Si nanocrystals decorated on vertical Si nanowires array

直立Siナノワイヤーアレイ上に修飾されたZnO被覆Siナノ結晶における共鳴エネルギー移動の光ルミネセンスの特徴

Author (5)： GHOSH Ramesh (Dep. of Physics, Indian Inst. of Technol. Guwahati, Guwahati 781039, IND) ,  GIRI P.K. (Dep. of Physics, Indian Inst. of Technol. Guwahati, Guwahati 781039, IND) ,  GIRI P.K. (Centre for Nanotechnology, Indian Inst. of Technol. Guwahati, Guwahati 781039, IND) ,  IMAKITA Kenji (Dep. of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe Univ., Kobe 657-8501, JPN) ,  FUJII Minoru (Dep. of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe Univ., Kobe 657-8501, JPN)
Material： Journal of Alloys and Compounds  (J Alloy Compd)
Volume： 638  Page： 419-428  Publication year： Jul. 25, 2015 
JST Material Number： D0083A  ISSN： 0925-8388  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *silicon ,  zinc oxide ,  *nano crystal ,  *photoluminescence ,  nanostructure ,  fine line ,  red shift ,  sequence and arrangement ,  energy transfer ,  resonance ,  band gap ,  device structure ,  carrier recombination ,  compound semiconductor ,  lattice defect ,  heterojunction
Semi thesaurus term： energy band ,  nanowire array ,  hetero-structure ,  resonance energy transfer ,  oxide semiconductor

JST classification (1)： Luminescence of inorganic compounds  (BM08093J)

Terms in the title (7)： Si ,  ナノワイヤーアレイ ,  修飾 ,  ZnO ,  ナノ結晶 ,  共鳴エネルギー移動 ,  光ルミネセンス