Art

J-GLOBAL ID：201502271037817930   Reference number：15A0418848

Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon

シリコン基板上のゲルマニウム-on-絶縁体モノリシック集積のためのゲルマニウムの横方向被覆成長

Author (10)： NAM Ju Hyung (Deptartment of Electrical Engineering, Stanford Univ., Stanford, CA 94305-4075, USA) ,  ALKIS Sabri (Dep. of Electrical and Electronics Engineering, UNAM-National Nanotechnology Res. Center, Inst. of Materials Sci. ...) ,  NAM Donguk (Deptartment of Electrical Engineering, Stanford Univ., Stanford, CA 94305-4075, USA) ,  AFSHINMANESH Farzaneh (Geballe Lab. for Advanced Materials, Stanford Univ., 476 Lomita Mall, Stanford, CA 94305-4045, USA) ,  SHIM Jaewoo (School of Information and Communication Engineering, Sungkyunkwan Univ., Suwon, Gyeonggi Province 440-746, KOR) ,  PARK Jin-Hong (School of Information and Communication Engineering, Sungkyunkwan Univ., Suwon, Gyeonggi Province 440-746, KOR) ,  BRONGERSMA Mark (Geballe Lab. for Advanced Materials, Stanford Univ., 476 Lomita Mall, Stanford, CA 94305-4045, USA) ,  OKYAY Ali Kemal (Dep. of Electrical and Electronics Engineering, UNAM-National Nanotechnology Res. Center, Inst. of Materials Sci. ...) ,  KAMINS Theodore I. (Deptartment of Electrical Engineering, Stanford Univ., Stanford, CA 94305-4075, USA) ,  SARASWAT Krishna (Deptartment of Electrical Engineering, Stanford Univ., Stanford, CA 94305-4075, USA)
Material： Journal of Crystal Growth  (J Cryst Growth)
Volume： 416  Page： 21-27  Publication year： Apr. 15, 2015 
JST Material Number： B0942A  ISSN： 0022-0248  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *Germanium ,  *insulating material ,  integration (accumulation) ,  *epitaxy ,  *photodetector ,  *insulator ,  *lateral growth
Semi thesaurus term： Monolithic integration ,  *lateral overgrowth

JST classification (2)： Crystal growth of semiconductors  (BK13040X) ,  Infrared photometry and photodetectors  (BD07032W)

Terms in the title (5)： シリコン基板 ,  ゲルマニウム ,  絶縁体 ,  モノリシック集積 ,  横方向被覆成長