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J-GLOBAL ID:201502271363701712   Reference number:15A0165506

A simple method for forming compositionally graded InxGb1-xAs1-ySby base of double-heterojunction bipolar transistors modulating CBr4-doping-precursor flow in metalorganic chemical vapor deposition

有機金属化学気相成長法でCBr4ドーピング前駆体の流れを調節する2重ヘテロ接合バイポーラトランジスタの組成傾斜InxGa1-xAs1-ySby系を形成するための簡単な方法
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Material:
Volume:Issue: 11  Page: 114102.1-114102.4  Publication year: Nov. 2014 
JST Material Number: F0599C  ISSN: 1882-0778  CODEN: APEPC4  Document type: Article
Article type: 短報  Country of issue: United Kingdom (GBR)  Language: ENGLISH (EN)
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All keywords is available on JDreamIII(charged).
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Transistors  ,  Semiconductor thin films 
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Reference (19):
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  • R. Lai, X. B. Mei, W. R. Deal, W. Yoshida, Y. M. Kim, P. H. Liu, J. Lee, J. Uyeda, V. Radisic, M. Lange, T. Gaier, L. Samoska, and A. Fung, IEDM Tech. Dig., 2007, p. 609.
  • W. Liu, Handbook of III-V Heterojunction Bipolar Transistors (Wiley, New York, 1998) p. 188.
  • W. Snodgrass, W. Hafez, N. Harif, and M. Feng, IEDM Tech. Dig., 2006, p. 1.
  • H. G. Liu, O. Ostinelli, Y. Zeng, and C. R. Bolognesi, IEDM Tech. Dig., 2007, p. 667.
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