Art

J-GLOBAL ID：201502275242411348   Reference number：15A0109135

Growth of wurtzite GaP in InP/GaP core-shell nanowires by selective-area MOVPE

InP/GaPコア-シェル型ナノワイヤのウルツ鉱型GaPの選択領域MOVPEによる成長

Author (5)： ISHIZAKA Fumiya (Graduate School of Information Sci. and Technol., and Res. Center for Integrated Quantum Electronics (RCIQE) ...) ,  HIRAYA Yoshihiro (Graduate School of Information Sci. and Technol., and Res. Center for Integrated Quantum Electronics (RCIQE) ...) ,  TOMIOKA Katsuhiro (Graduate School of Information Sci. and Technol., and Res. Center for Integrated Quantum Electronics (RCIQE) ...) ,  TOMIOKA Katsuhiro (PRESTO, Japan Sci. and Technol. Agency (JST), Honcho Kawaguchi, Saitama 332-0012, JPN) ,  FUKUI Takashi (Graduate School of Information Sci. and Technol., and Res. Center for Integrated Quantum Electronics (RCIQE) ...)
Material： Journal of Crystal Growth  (J Cryst Growth)
Volume： 411  Page： 71-75  Publication year： Feb. 01, 2015 
JST Material Number： B0942A  ISSN： 0022-0248  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *structure ,  *indium phosphide ,  *gallium phosphide ,  compound semiconductor ,  *wurtzite type crystal ,  *MOCVD ,  semiconductor thin film ,  *nanowire ,  template effect ,  transmission electron microscope ,  mathematical model ,  light emitting diode ,  phase transition ,  crystal structure ,  crystal orientation ,  *core-shell structure
Semi thesaurus term： 選択領域MOVPE

JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (7)： InP ,  GAP ,  コア-シェル ,  ナノワイヤ ,  ウルツ鉱 ,  MOVPE ,  成長