Rchr
J-GLOBAL ID：201601008996814534
Update date: Nov. 01, 2024
Hideki Hirayama
ヒラヤマ ヒデキ | Hideki Hirayama
Affiliation and department：
Job title：
Chief Scientist
Research field (1)：
Semiconductors, optical and atomic physics
Research theme for competitive and other funds (17)：
- 2024 - 2029 A Study on realizing unexplored frequency and room temperature operation THz-QCL through innovation of inter-subband transition mechanism
- 2018 - 2021 Characterization of defect levels in UV-LEDs by below-gap excitation light under operating condition
- 2016 - 2021 Research on novel light emitting devices using the unique properties generated by singularity of crystal
- 2015 - 2020 Research on unexplored frequency quantum-cascade lasers using nitride semiconductors
- 2012 - 2015 Comprehensive multi-level spectroscopy of below-gap states without electrode
- 2012 - 2015 Research on vertical-type large-area high-power deep-UV LEDs fabricated on Si substrates
- 2011 - 2015 THz量子カスケードレーザの動作高温化と周波数拡大に関する研究
- 2009 - 2011 Characterization of Defect Levels with Energy and Spatial Distribution by Deep Level Microscope
- 2009 - 2011 Research for Terahertz Quantum Cascade Lasers using Nitride-based Semiconductors
- 2006 - 2010 Research for high-efficiency deep-UV emitting devices using quaternary InAlGaN nitride semiconductors
- 2007 - 2008 Research for Far-infrared-Terahertz Quantum Cascade Lasers using Nitride-based Semiconductors
- 2003 - 2007 Development of deep UV light emitting devices using nano-technology and the application
- 2002 - 2004 Development of ultraviolet bright light-emitting diodes using quaternary InAlGaN
- 2001 - 2003 Fabrication of high hole density p-type nitride semiconductor film crystal using alternating xrdoping techniques and its applications
- 1999 - 2001 Study on Impurity Co-Doping by Atomic Positional Control
- 1998 - 2001 Fabrication of Photonic Crystals with Spatial Phase Control Regions and their applications to Optical Devices
- 1998 - 1999 紫外半導体レーザーの為の高輝度紫外発光III族窒素化物量子ドットに関する研究
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Papers (296)：
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Siqi Li, Xiao Liang, Pengfei Shao, Songlin Chen, Zhenhua Li, Xujun Su, Tao Tao, Zili Xie, M. Ajmal Khan, Li Wang, et al. Monolayer-scale AlN/GaN digital alloys grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters. 2024. 125. 11
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Hideaki Murotani, Kunio Himeno, Hayate Ohkawara, Kaichi Tani, Satoshi Kurai, Narihito Okada, Noritoshi Maeda, Muhammad Ajmal Khan, Hideki Hirayama, Yoichi Yamada. Photoluminescence Excitation Spectroscopy of Stimulated Emission from AlGaN-Based Multiple Quantum Wells with an Emission Wavelength Around 280 nm. physica status solidi (b). 2024
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Li Wang, Mingxi Chen, Tsung-Tse Lin, Ke Wang, Hideki Hirayama. Interdiffusion limiting on self-consistent optical gain in terahertz quantum cascade lasers. Applied Physics Express. 2023. 16. 7. 072004-072004
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Li Wang, Tsung-Tse Lin, Ke Wang, Hideki Hirayama. Clean three-level direct-phonon injection terahertz quantum cascade laser. Applied Physics Letters. 2023. 122. 22
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Yuri Itokazu, Noritoshi Maeda, Hiroyuki Yaguchi, Hideki Hirayama. Significant improvement of injection efficiency in deep-UV LD structures by light Mg doping in p-core layer. Japanese Journal of Applied Physics. 2023
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MISC (115)：
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平山 秀樹, Ajmal Muhammad Khan, 鹿嶋 行雄, 松浦 恵理子, 前田 哲利, 牟田 実広, 大神 裕之, 毛利 健吾, 河島 宏和, 祝迫 恭, et al. サファイア基板上220~230nm far-UVC LEDの進展-Recent Progress of 230 nm AlGaN far-UVC LED on sapphire substrate-特集 深紫外光デバイスの進展とその応用. Optronics : 光技術コーディネートジャーナル. 2024. 43. 5. 76-81
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平山秀樹, KHAN Ajmal Muhammad, 鹿嶋行雄, 松浦恵理子, 前田哲利, 牟田実広, 大神裕之, 毛利健吾, 河島宏和, 祝迫恭, et al. Recent Progress of 230 nm AlGaN far-UVC LED on sapphire substrate. Optronics. 2024. 509
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平山秀樹, KHAN Ajmal Muhammad, 鹿嶋行雄, 松浦恵理子, 前田哲利, 牟田実広, 大神裕之, 祝迫恭, 藤川紗千恵, 矢口裕之. 輝きと魅力を増す最近の光源 生体無害ウイルス不活化を目指した230nm帯高出力far-UVC LEDの進展. 光アライアンス. 2024. 35. 7
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永田裕弥, 永田裕弥, 仲元寺郁弥, 仲元寺郁弥, 前田哲利, 藤川紗千恵, 藤川紗千恵, 矢口裕之, 祝迫恭, 平山秀樹. Dependence of emission efficiency of 230 nm AlGaN far-UVC LED on quantum well structure. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2023. 84th
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牟田実広, 大神裕之, 毛利健吾, 河島宏和, 前田哲利, KHAN Ajmal, 鹿嶋行雄, 松浦恵里子, 中村祐樹, 住司光, et al. Development of Shorter Wavelength 230 nm-Band Far-UVC LEDs and Realization of High Output Power LED Panels. 電子情報通信学会技術研究報告(Web). 2023. 123. 288(ED2023 14-37)
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Books (40)：
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Growth Techniques of AlN/AlGaN and Development of High-Efficiency Deep-Ultraviolet Light-emitting Diodes
Woodhead Publishing 2015
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深紫外LEDの効率向上と市場展開への期待
株式会社オプトロニクス 2015
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AlGaN深紫外LEDの進展と最近の動向
日本工業出版株式会社 2015
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無極性a面AlGaN/AlNの高温成長と深紫外発光特性
一般社団法人電子情報通信学会 2015
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GaN系THz-QCLの最近の進展
一般社団法人電子情報通信学会 2015
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Lectures and oral presentations (187)：
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Current Status and Future of III-Nitride Ultraviolet and THz Emittres
(International Workshop on Nitiride Semiconductors (IWN 2016), 2016)
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THz量子カスケードレーザの進展と展望
(第140回微小光学研究会 2016)
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深紫外LEDの最近の進展と展望
(応用物理学会・応用電子物性分科会6月研究例会 2016)
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テラヘルツ量子カスケードレーザの進展と今後の展望
(応用物理学会・テラヘルツ電磁波技術究例会 2016)
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Recent Progress of AlGaN Deep-UV LED using Transparent Contact Layer
(15th Symposium on the Science and Technology of Lighting (LS-15) 2016)
ｍore...
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