Art
J-GLOBAL ID：201602005904362718   Reference number：73A0040202

Polarized memory effect observed on Se-SnO2 system.

Se-SnO2系で観察した極性記憶効果
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Author (3)：
MATSUSHITA T

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, 
YAMAGAMI T

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, 
OKUD A M

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Material：
Jpn J Appl Phys  (Japanese Journal of Applied Physics)

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Volume： 11  Issue： 11  Page： 1657-1662  Publication year： 1972 
JST Material Number： G0520A  ISSN： 0021-4922  CODEN： JJAPA   Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)
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On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
スイッチ効果

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, 
電流電圧特性

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, 
薄膜

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Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
Se-SnO2系

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, 
記憶効果

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, 
極性記憶効果

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Terms in the title (3)：
Terms in the title
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観察

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, 
極性

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, 
記憶効果

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