{{ $t("message.ADVERTISEMENT") }}
{{ $t("message.AD_EXPIRE_DATE") }}{{ad01_expire_date}}
{{ $t("message.ADVERTISEMENT") }}
{{ $t("message.AD_EXPIRE_DATE") }}{{ad02_expire_date}}
J-GLOBAL ID:201602006031777971   Reference number:60A0142095

Gamma irradiation of silicon.I.Levels in n-type material containing oxygen.

シリコンへのγ線照射 I 酸素含有N型半導体における準位
Author (2):
Volume: 31  Issue:Page: 1279-1286  Publication year: 1960
JST Material Number: C0266A  ISSN: 0021-8979  CODEN: JAPIAU  Document type: Article
Article type: 原著論文  Country of issue: United States (USA) 
Terms in the title (4):
Terms in the title
Keywords automatically extracted from the title.

Return to Previous Page