J-GLOBAL ID:201602007228799434   Reference number:58A0053827

Power Measurement at 4 Gc/s by the application of the Hall Effect in a Semiconductor.

Author (2):
Volume: 106  Issue: 25  Page: 27-30  Publication year: 1959 
JST Material Number: D0381A  Document type: Article
Country of issue: United Kingdom (GBR) 
Terms in the title (2):
Terms in the title
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