Art
J-GLOBAL ID：201602007228799434   Reference number：58A0053827

Power Measurement at 4 Gc/s by the application of the Hall Effect in a Semiconductor.

ホール効果利用の4Gc電力測定
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Author (2)：
STEPHENSON L M

About STEPHENSON L M

, 
BARLOW H E M

About BARLOW H E M


Material：
Proc Inst Electr Eng Part B Radio Electron Eng  (Proceedings of the Institution of Electrical Engineers. Part B. Radio and Electronic Engineering)

About Proc Inst Electr Eng Part B Radio Electron Eng


Volume： 106  Issue： 25  Page： 27-30  Publication year： 1959 
JST Material Number： D0381A  Document type： Article
Country of issue： United Kingdom (GBR) 
Terms in the title (2)：
Terms in the title
Keywords automatically extracted from the title.
ホール効果

About ホール効果

, 
電力測定

About 電力測定


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