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J-GLOBAL ID:201602008008869497   Reference number:68A0208810

Gallium arsenide insulated gate field effect transistors.

GaAs 絶縁ゲート電界効果トランジスタ
Author (2):
Page: 219-227  Publication year: 1966
JST Material Number: Z0000A  Document type: Unknown
Article type: 予稿  Country of issue: Other (ZZZ) 
Terms in the title (2):
Terms in the title
Keywords automatically extracted from the title.

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