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J-GLOBAL ID：201602012705728203   Reference number：71A0242535

SbSI-SnO2異種構造薄膜における電流しゃ断と記憶作用

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Author (2)：
HAMAKAWA Y

About HAMAKAWA Y

, 
YOSHIDA M

About YOSHIDA M


Material：
Proc Conf Solid State Devices  (Proceedings of the Conference on Solid State Devices)

About Proc Conf Solid State Devices


Volume： 1970  Page： 80-85  Publication year： 1970 
JST Material Number： S0652A  Document type： Proceedings
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
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All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
ヘテロ接合

About ヘテロ接合


Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
SbSI-SnO2

About SbSI-SnO2

, 
SbSI-SnO2(薄膜接合)

About SbSI-SnO2(薄膜接合)

, 
記憶効果

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, 
薄膜接合

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Terms in the title (2)：
Terms in the title
Keywords automatically extracted from the title.
薄膜

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, 
電流しゃ断

About 電流しゃ断


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