Art
J-GLOBAL ID：201602013772178788   Reference number：70A0031413

The preparation and properties of vapor-deposited single-crystalline GaN.

蒸着単結晶GaNの製作と特性
  • Publisher site Copy service
  • Access JDreamⅢ for advanced search and analysis.
Author (2)：
MARUSKA H P

About MARUSKA H P

, 
TIETJEN J J

About TIETJEN J J


Material：
Appl Phys Lett  (Applied Physics Letters)

About Appl Phys Lett


Volume： 15  Issue： 11  Page： 327-329  Publication year： 1969 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
格子定数

About 格子定数

, 
気相成長

About 気相成長

, 
光吸収

About 光吸収


Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
GaN

About GaN


Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
蒸着

About 蒸着

, 
単結晶

About 単結晶

, 
GaN

About GaN

, 
製作

About 製作


Return to Previous Page

TOP

BOTTOM