Art
J-GLOBAL ID：201602015121873570   Reference number：74A0237214

Inversion charge redistribution model of the high-frequency MOS capacitance.

高周波MOS容量の逆転電荷再分布モデル
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Author (2)：
BERMAN A

About BERMAN A

, 
KERR D R

About KERR D R


Material：
Solid-State Electron  (Solid-State Electronics)

About Solid-State Electron


Volume： 17  Issue： 7  Page： 735-742  Publication year： 1974 
JST Material Number： H0225A  ISSN： 0038-1101  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
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On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
MOS構造

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, 
コンデンサ

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, 
静電容量

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, 
半導体素子

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Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
キャパシタンス

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Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
高周波

About 高周波

, 
MOS

About MOS

, 
逆転

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, 
電荷再分布

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, 
モデル

About モデル


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