{{ $t("message.ADVERTISEMENT") }}
{{ $t("message.AD_EXPIRE_DATE") }}{{ad01_expire_date}}
{{ $t("message.ADVERTISEMENT") }}
{{ $t("message.AD_EXPIRE_DATE") }}{{ad02_expire_date}}
Art
J-GLOBAL ID:201602015918971844 Reference number:60A0104227
Characteristics of a high solar conversion efficiency gal-lium arsenide P-N junction.
高能率太陽光起電変換GaAsP-N接合の特性
Publisher site
Copy service
Access JDreamⅢ for advanced search and analysis.
Author (3):
BYLNDER E G
About BYLNDER E G
Search "BYLNDER E G"
,
HODGES A J
About HODGES A J
Search "HODGES A J"
,
ROBERTS J A
About ROBERTS J A
Search "ROBERTS J A"
Material:
J Opt Soc Am (Journal of the Optical Society of America)
About J Opt Soc Am
Search "C0327A"
Search ISSN,ISBN,CODEN
Detailed information
Volume:
50
Issue:
10
Page:
983-985
Publication year:
1960
JST Material Number:
C0327A
ISSN:
0030-3941
CODEN:
JOSAA
Document type:
Article
Article type:
原著論文
Country of issue:
United States (USA)
Terms in the title (2):
Terms in the title
Keywords automatically extracted from the title.
高能率
About 高能率
Search "高能率"
Detailed information
,
太陽光
About 太陽光
Search "太陽光"
Detailed information
Return to Previous Page
TOP