Art

J-GLOBAL ID：201602206610201622   Reference number：16A0277898

Modification of the CdTe-In Interface by Irradiation with Nanosecond Laser Pulses through the CdTe Crystal

CdTe結晶を通過するナノ秒レーザパルスの照射によるCdTe-In界面の変化

Author (3)： ZELENSKA Kateryna S. (Taras Shevchenko National Univ. Kyiv, Kyiv, UKR) ,  GNATYUK Dmytro V. (Shizuoka Univ., Hamamatsu, JPN) ,  AOKI Toru (Shizuoka Univ., Hamamatsu, JPN)
Material： Journal of Laser Micro/Nanoengineering (Web)  (J Laser Micro Nanoeng (Web))
Volume： 10  Issue： 3  Page： 298-303 (WEB ONLY)  Publication year： Dec. 2015 
JST Material Number： U0377A  ISSN： 1880-0688  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *pulsed laser irradiation ,  pulsed laser ,  *cadmium sulfide ,  compound semiconductor ,  *Indium ,  *interface (surface) ,  *doping ,  PN junction ,  semiconductor detector ,  *rectification (electric) ,  Computer Simulation ,  temperature distribution ,  *underwater ,  *radiation detector ,  X-ray ,  gamma-ray ,  current-voltage characteristic ,  computer application ,  utilization
Semi thesaurus term： nanosecond laser

JST classification (2)： Radiation detection and detectors  (AD08020J) ,  Applications of lasers  (BD04100V)

Reference (20)：

• “Laser Annealing of Semiconductors” ed. by J. M. Poate and J. W. Mayer, (Academic Press, New York, 1982) p.576.
• R. T. Young: “Pulsed Laser Processing of Semiconductors”, in “Semiconductors and Semimetals” ed. by R. F. Wood, C. W. White and R. T. Young, (Academic Press, New York, 1985) p.693.
• “Resent Advances in Laser Processing of Materials” ed. by J. Perriere, E. Millon and E. Fogarassy, (Elsevier, Oxford, 2006) p.472.
• V. A. Gnatyuk, T. Aoki, Y. Nakanishi and Y. Hatanaka: Surf. Sci., 542, (2003) 142.
• T. Aoki, D. V. Gnatyuk, V. A. Odarych, L. V. Poperenko, I. V. Yurgelevych and S. N. Levytskyi: Thin Solid Films, 519, (2011) 2834.

Terms in the title (5)： CdTe ,  結晶 ,  ナノ秒レーザ ,  パルス ,  界面