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J-GLOBAL ID:201602210183882386   Reference number:16A0106140

Electronic structure of photoresponsive Ag6M2O7 (M = Si, Ge)

光応答性Ag6M2O7(M=Si,Ge)の電子構造
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Material:
Volume: 124  Issue:Page: 116-121 (J-STAGE)  Publication year: 2016 
JST Material Number: U0409A  ISSN: 1348-6535  Document type: Article
Article type: 原著論文  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
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Electronic structure of crystalline insulators 
Reference (18):
  • 1) A. Fujishima and K. Honda, Nature, 238, 37–38 (1972).
  • 2) M. Bejblová, D. Procházková and J. Cejka, J. Chem. Sus. Chem., 2, 486–499 (2009).
  • 3) Z. Lou, B. Huang, Z. Wang, X. Ma, R. Zhang, X. Zhang, X. Qin, Y. Dai and M. H. Whangbo, Chem. Mater., 26, 3873–3875 (2014).
  • 4) C. Linke and M. Jansen, Z. Anorg. Allg. Chem., 622, 486–493 (1996).
  • 5) F. Tran and P. Blaha, Phys. Rev. Lett., 102, 226401 (2009).
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