{{ $t("message.ADVERTISEMENT") }}
{{ $t("message.AD_EXPIRE_DATE") }}{{ad01_expire_date}}
{{ $t("message.ADVERTISEMENT") }}
{{ $t("message.AD_EXPIRE_DATE") }}{{ad02_expire_date}}
Art
J-GLOBAL ID:201602217562413083   Reference number:16A0582563

High resolution characterizations of a semiconductor fine structure using scanning nonlinear dielectric microscopy (SNDM)

走査型非線形誘電率顕微鏡(SNDM)による半導体微細構造の高分解能評価
Author (1):
Material:
Volume: 85  Issue:Page: 560-567  Publication year: Jul. 10, 2016
JST Material Number: F0252A  ISSN: 0369-8009  CODEN: OYBSA  Document type: Article
Article type: 短報  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

Semi thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

JST classification (3):
JST classification
Category name(code) classified by JST.
Electron and ion microscopes  ,  Measuring methods and instruments of R,L,C,Q, and dielectric constant  ,  Lattice defects in semiconductors 
Terms in the title (5):
Terms in the title
Keywords automatically extracted from the title.

Return to Previous Page