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J-GLOBAL ID：201602223853137967   Reference number：16A0726560

Improved conversion efficiency of InN/p-GaN heterojunction solar cells with the InON quantum dots interlayer

InON量子ドット中間層を有するInN/p GaNヘテロ接合太陽電池の変換効率の改善【Powered by NICT】

Author (5)： Liang Zhong-Yi (Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taiwan) ,  Yang Cheng-Yi (Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taiwan) ,  Chan Yu-Teng (Department of Mechanical Engineering, Yuan Ze University, Taiwan) ,  Jiang Chi-Yung (Department of Mechanical Engineering, Yuan Ze University, Taiwan) ,  Ke Wen-Cheng (Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taiwan)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2016  Issue： CSW  Page： 1  Publication year： 2016 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： Heterojunction solar cells wer...

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Thesaurus term： interface (surface) ,  HF ,  indium nitride ,  *quantum dot ,  surface level ,  *gallium nitride ,  carrier transport ,  oxygen vacancy ,  short-circuit current density ,  sapphire substrate ,  *conversion efficiency ,  *heterojunction solar cell ,  *interlayer
Semi thesaurus term： 電力変換効率 ,  開回路電圧 , 【Automatic Indexing@JST】

JST classification (2)： Signal theory  (ND02020G) ,  Graphic and image processing in general  (JE04010I)

Terms in the title (6)： 量子ドット ,  中間層 ,  InN ,  GaN ,  ヘテロ接合太陽電池 ,  変換効率