Art

J-GLOBAL ID：201602225026946423   Reference number：16A0897176

Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics

オプトエレクトロニクスのための熱アニーリングによる酸化グラフェンの価電子バンド電子構造展開

Author (25)： Yamaguchi Hisato (MPA-11 Materials Synthesis and Integrated Devices (MSID), Materials Physics and Applications (MPA) Division, Mail Stop: K763, Los Alamos National Laboratory (LANL), P.O. Box 1663, Los Alamos, New Mexico, 87545, USA. [e-mail]) ,  Ogawa Shuichi (Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan) ,  Watanabe Daiki (Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan) ,  Hozumi Hideaki (Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan) ,  Gao Yongqian (Center for Integrated Nanotechnologies (CINT), MPA Division, Mail Stop: K771, LANL, P.O. Box 1663, Los Alamos, New Mexico, 87545, USA) ,  Eda Goki (Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117542) ,  Eda Goki (Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543) ,  Eda Goki (Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore, 117546) ,  Mattevi Cecilia (Department of Materials, Imperial College London, Exhibition Road, London, SW7 2AZ, UK) ,  Fujita Takeshi (WPI Advanced Institute for Materials Research (AIMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi, 980-8577, Japan) ,  Yoshigoe Akitaka (Quantum Beam Science Directorate, Japan Atomic Energy Agency, Kouto, Sayo-cho, Sayo-gun, Hyogo, 679-5198, Japan) ,  Ishizuka Shinji (Department of Materials Science and Engineering, Akita National College of Technology, 1-1 Bunkyo-machi, Iigima, Akita, 011-8511, Japan) ,  Adamska Lyudmyla (T-1 Physics and Chemistry of Materials, Theoretical Division, Mail Stop: B221, LANL, P.O. Box 1663, Los Alamos, New Mexico, 87545, USA) ,  Adamska Lyudmyla (Center for Nonlinear Studies (CNLS), Theoretical Division, Mail Stop: B258, LANL, P.O. Box 1663, Los Alamos, New Mexico, 87545, USA) ,  Yamada Takatoshi (Nanotube Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan) ,  Dattelbaum Andrew M. (MPA-11 Materials Synthesis and Integrated Devices (MSID), Materials Physics and Applications (MPA) Division, Mail Stop: K763, Los Alamos National Laboratory (LANL), P.O. Box 1663, Los Alamos, New Mexico, 87545, USA) ,  Gupta Gautam (MPA-11 Materials Synthesis and Integrated Devices (MSID), Materials Physics and Applications (MPA) Division, Mail Stop: K763, Los Alamos National Laboratory (LANL), P.O. Box 1663, Los Alamos, New Mexico, 87545, USA) ,  Doorn Stephen K. (Center for Integrated Nanotechnologies (CINT), MPA Division, Mail Stop: K771, LANL, P.O. Box 1663, Los Alamos, New Mexico, 87545, USA) ,  Velizhanin Kirill A. (T-1 Physics and Chemistry of Materials, Theoretical Division, Mail Stop: B221, LANL, P.O. Box 1663, Los Alamos, New Mexico, 87545, USA) ,  Teraoka Yuden (Quantum Beam Science Directorate, Japan Atomic Energy Agency, Kouto, Sayo-cho, Sayo-gun, Hyogo, 679-5198, Japan) ,  Chen Mingwei (WPI Advanced Institute for Materials Research (AIMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi, 980-8577, Japan) ,  Htoon Han (Center for Integrated Nanotechnologies (CINT), MPA Division, Mail Stop: K771, LANL, P.O. Box 1663, Los Alamos, New Mexico, 87545, USA) ,  Chhowalla Manish (Department of Materials Science and Engineering, Rutgers University, 607 Taylor Road Piscataway, New Jersey, 08854, USA) ,  Mohite Aditya D. (MPA-11 Materials Synthesis and Integrated Devices (MSID), Materials Physics and Applications (MPA) Division, Mail Stop: K763, Los Alamos National Laboratory (LANL), P.O. Box 1663, Los Alamos, New Mexico, 87545, USA. [e-mail]) ,  Takakuwa Yuji (Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan. [e-mail])
Material： Physica Status Solidi. A. Applications and Materials Science  (Physica Status Solidi. A.)
Volume： 213  Issue： 9  Page： 2380-2386  Publication year： Sep. 2016 
JST Material Number： D0774A  ISSN： 1862-6300  CODEN： PSSABA  Document type： Article
Article type： 短報  Country of issue： Germany, Federal Republic of (DEU)  Language： ENGLISH (EN)

Thesaurus term： *graphene ,  *oxide ,  *heat treatment ,  *electronic structure ,  *valence band ,  *reduction (reaction) ,  *thermochemical reaction ,  functionalization ,  Temperature ,  state density ,  *band gap ,  *graphene oxide ,  *thermal annealing ,  *thermal reduction ,  annealing temperature

Author keywords (5)： Fermi level ,  graphene oxide ,  optoelectronic ,  ultraviolet photoelectron spectroscopy ,  valence-band electronic structure

JST classification (2)： Oxide thin films  (BK14050P) ,  Electronic structure of crystalline semiconductors  (BM02060N)

Terms in the title (6)： オプトエレクトロニクス ,  熱アニーリング ,  酸化グラフェン ,  価電子バンド ,  電子構造 ,  展開