Art

J-GLOBAL ID：201602236504994017   Reference number：16A0731235

Effects of doping F and transition metal on crystal structure and properties of ZnO thin film

遷移金属とF共ドープZNO薄膜の構造および磁気光特性【JST・京大機械翻訳】

Author (5)： Zhou Panfan (Key Laboratory of Information Materials of Sichuan Province, College of Electrical and Information Engineering Southwest University for Nationalities) ,  Yuan Huan (Key Laboratory of Information Materials of Sichuan Province, College of Electrical and Information Engineering Southwest University for Nationalities) ,  Xu Xiaonan (Key Laboratory of Information Materials of Sichuan Province, College of Electrical and Information Engineering Southwest University for Nationalities) ,  Lu Yihong (Key Laboratory of Information Materials of Sichuan Province, College of Electrical and Information Engineering Southwest University for Nationalities) ,  Xu Ming (Key Laboratory of Information Materials of Sichuan Province, College of Electrical and Information Engineering Southwest University for Nationalities)
Material： Wuli Xuebao  (Butsuri Gakuho)
Volume： 64  Issue： 24  Page： 247503-1-247503-11  Publication year： Dec. 2015 
JST Material Number： B0628A  ISSN： 1000-3290  CODEN： WLHPA  Document type： Article
Article type： 原著論文  Country of issue： China (CHN)  Language： CHINESE (ZH)

Abstract/Point： Transition metal (TM=Cu, Ni, M...

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Thesaurus term： sol-gel process ,  visible spectrum ,  *doping ,  crystallinity ,  *thin film ,  saturation magnetization ,  preferred orientation ,  light emission ,  photoluminescence ,  *Magnetics ,  band gap ,  scanning electron microscope ,  particle size (ratio) ,  blue emission ,  surface morphology

Author keywords (4)： ZnO films ,  sol-gel method ,  optical properties ,  magnetic properties

JST classification (2)： Luminescence of semiconductors  (BM08092S) ,  Oxide thin films  (BK14050P)

Terms in the title (5)： 遷移金属 ,  ドープ ,  ZnO薄膜 ,  磁気 ,  光特性