Art

J-GLOBAL ID：201602238428304824   Reference number：16A0994158

Structural and optical studies of strain relaxation in Ge_1-xSn_x layers grown on Ge/Si(001) by molecular beam epitaxy

分子線エピタキシによるGe/Si(001)上に成長したGe_1-xSn_x層における歪緩和の構造的および光学的研究

Author (8)： Nikolenko A.S. (V. Lashkaryov Institute of Semiconductor Physics National Academy of Sciences of Ukraine, 41 Nauky pr., 03028 Kyiv, Ukraine) ,  Strelchuk V.V. (V. Lashkaryov Institute of Semiconductor Physics National Academy of Sciences of Ukraine, 41 Nauky pr., 03028 Kyiv, Ukraine) ,  Safriuk N.V. (V. Lashkaryov Institute of Semiconductor Physics National Academy of Sciences of Ukraine, 41 Nauky pr., 03028 Kyiv, Ukraine) ,  Kryvyi S.B. (V. Lashkaryov Institute of Semiconductor Physics National Academy of Sciences of Ukraine, 41 Nauky pr., 03028 Kyiv, Ukraine) ,  Kladko V.P. (V. Lashkaryov Institute of Semiconductor Physics National Academy of Sciences of Ukraine, 41 Nauky pr., 03028 Kyiv, Ukraine) ,  Oberemok O.S. (V. Lashkaryov Institute of Semiconductor Physics National Academy of Sciences of Ukraine, 41 Nauky pr., 03028 Kyiv, Ukraine) ,  Borkovska L.V. (V. Lashkaryov Institute of Semiconductor Physics National Academy of Sciences of Ukraine, 41 Nauky pr., 03028 Kyiv, Ukraine) ,  Sadofyev Yu.G. (P.N. Lebedev Physical Institute of the Russian Academy of Sciences, 53 Leninskiy Prospekt, 119991 Moscow, Russia)
Material： Thin Solid Films
Volume： 613  Page： 68-74  Publication year： Aug. 31, 2016 
JST Material Number： B0899A  ISSN： 0040-6090  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *MBE growth ,  residual strain ,  *tin ,  *semiconductor thin film ,  *buffer layer ,  *Germanium ,  *solid solution ,  chemical composition ,  X-Ray Diffraction ,  microscopic Raman spectroscopy ,  *stress relaxation ,  cutting ,  substrate (plate) ,  silicon ,  heteroepitaxy ,  inclination ,  face ,  lattice
Semi thesaurus term： micro Raman spectroscopy ,  miss-cut ,  格子面傾き

Author keywords (5)： Germanium-tin ,  Molecular beam epitaxy ,  High-resolution X-ray diffraction ,  Raman scattering ,  Strain relaxation

JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (7)： 分子線エピタキシ ,  Ge ,  Si ,  成長 ,  歪緩和 ,  光学 ,  研究