Art

J-GLOBAL ID：201602243549304822   Reference number：16A0387716

Low resistivity contact on n-type Ge using low work-function Yb with a thin TiO₂ interfacial layer

薄いTiO₂界面層を用いた低仕事関数Ybを使ったn型Geに対する低接触抵抗率

Author (6)： DEV Sachin (Dep. of Electrical Engineering, Indian Inst. of Technol. Bombay, Mumbai, Maharashtra 400076, IND) ,  REMESH Nayana (Dep. of Electrical Engineering, Indian Inst. of Technol. Bombay, Mumbai, Maharashtra 400076, IND) ,  RAWAL Yaksh (Dep. of Electrical Engineering, Indian Inst. of Technol. Bombay, Mumbai, Maharashtra 400076, IND) ,  MANIK Prashanth Paramahans (Dep. of Electrical Engineering, Indian Inst. of Technol. Bombay, Mumbai, Maharashtra 400076, IND) ,  WOOD Bingxi (Applied Materials, Inc., Santa Clara, California 94085, USA) ,  LODHA Saurabh (Dep. of Electrical Engineering, Indian Inst. of Technol. Bombay, Mumbai, Maharashtra 400076, IND)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 108  Issue： 10  Page： 103507-103507-4  Publication year： Mar. 07, 2016 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： work function ,  N-type semiconductor ,  boundary layer ,  electrical resistivity ,  *Germanium ,  semiconductor ,  titanium oxide ,  semiconductor thin film ,  *ratio ,  height ,  MIS structure ,  interface layer ,  titanium dioxide ,  barrier height ,  layer
Semi thesaurus term： *specific contact resistivity

JST classification (1)： Metal-insulator-semiconductor structures  (BM03085X)

Terms in the title (6)： TiO2 ,  界面層 ,  仕事関数 ,  Yb ,  Ge ,  接触抵抗率