Art

J-GLOBAL ID：201602249842450960   Reference number：16A0472293

X-ray photoelectron spectroscopy analysis of boron defects in silicon crystal: A first-principles study

シリコン結晶中のホウ素欠陥のX線光電子分光解析:第1原理研究

Author (3)： Yamauchi Jun (Fac. of Sci. and Technol., Keio Univ., 3-14-1 Hiyoshi, Yokohama 223-8522, Japan) ,  Yoshimoto Yoshihide (Dep. of Computer Sci., Graduate School of Information Sci. and Technol., The Univ. of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan) ,  Suwa Yuji (Res. and Dev. Group, Hitachi, Ltd., 1-280, Higashi-Koigakubo, Kokubunji-shi, Tokyo 185-8601, Japan)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 119  Issue： 17  Page： 175704-175704-9  Publication year： May. 07, 2016 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： We carried out a comprehensive...

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Thesaurus term： *silicon ,  crystal ,  *boron ,  *lattice defect ,  X-ray photoelectron spectroscopy ,  *binding energy ,  *energy ,  first principle ,  cluster ,  *doping ,  P-type semiconductor ,  core level ,  *X-ray photoelectron spectrum ,  *ion implantation
Semi thesaurus term： defect formation ,  *formation energy

JST classification (5)： Irradiational changes semiconductors  (BK16123E) ,  Lattice defects in semiconductors  (BK12040Q) ,  Electron spectroscopy  (BM09060K) ,  Magnetic resonance,electron spectroscopy,other atomic spectra  (BH03050U) ,  Numerical computation  (JE02000J)

Terms in the title (7)： シリコン結晶 ,  ホウ素 ,  欠陥 ,  X線光電子分光 ,  解析 ,  第1原理 ,  研究