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J-GLOBAL ID：201602252494192181   Reference number：16A1362630

Electric Properties of Dirac Fermions Captured into 3D Nanoporous Graphene Networks

3Dナノ多孔性グラフェンネットワーク中に捕獲されたDiracフェルミ粒子の電気特性

Author (19)： Tanabe Yoichi (Department of Physics, Graduate School of Science, Tohoku University, Sendai, 980-8578, Japan) ,  Ito Yoshikazu (WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan) ,  Sugawara Katsuaki (WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan) ,  Hojo Daisuke (WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan) ,  Koshino Mikito (Department of Physics, Graduate School of Science, Tohoku University, Sendai, 980-8578, Japan) ,  Fujita Takeshi (WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan) ,  Aida Tsutomu (New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai, 980-8579, Japan) ,  Xu Xiandong (WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan) ,  Huynh Khuong Kim (WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan) ,  Shimotani Hidekazu (Department of Physics, Graduate School of Science, Tohoku University, Sendai, 980-8578, Japan) ,  Adschiri Tadafumi (WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan) ,  Takahashi Takashi (Department of Physics, Graduate School of Science, Tohoku University, Sendai, 980-8578, Japan) ,  Takahashi Takashi (WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan) ,  Tanigaki Katsumi (Department of Physics, Graduate School of Science, Tohoku University, Sendai, 980-8578, Japan) ,  Tanigaki Katsumi (WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan) ,  Aoki Hideo (Department of Physics, University of Tokyo, Hongo, Tokyo, 113-0033, Japan) ,  Chen Mingwei (WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan) ,  Chen Mingwei (CREST, Japan Science and Technology Agency, Saitama, 332-0012, Japan) ,  Chen Mingwei (Department of Materials Science and Engineering, Johns Hopkins University, Baltimore, MD, 21214, USA)
Material： Advanced Materials  (Adv Mater (Deerfield, Fla.))
Volume： 28  Issue： 46  Page： 10304-10310  Publication year： Dec. 14, 2016 
JST Material Number： W0001A  ISSN： 0935-9648  CODEN： ADVMEW  Document type： Article
Article type： 短報  Country of issue： Germany, Federal Republic of (DEU)  Language： ENGLISH (EN)

Thesaurus term： *graphene ,  *porosity(property) ,  *network structure ,  *fermion ,  electrical characteristic ,  *trapped particle ,  structure ,  *transistor ,  measurement ,  carrier mobility ,  massless field ,  polarity ,  electronic state ,  electric resistance ,  ratio ,  *ionic liquid ,  ammonium compound ,  drying ,  current-voltage characteristic ,  X-ray photoelectron spectroscopy ,  Raman spectrometry ,  electron microscopy ,  magnetic reluctance
Semi thesaurus term： *nanoporous ,  *Dirac particle ,  three-dimensional structure ,  *electric double layer transistor ,  electrical transport measurement ,  both poles ,  Hall resistance ,  on-off ratio ,  super criticality drying ,  scanning electron microscopy

Author keywords (5)： 3D nanoporous materials ,  CVD growth ,  electric transport ,  field effect transistors ,  graphene

JST classification (4)： Transistors  (NC03070N) ,  Carbon and its compounds  (YB02060D) ,  Molten salts  (CB05050R) ,  Other contacts of semiconductors  (BM03086O)

Substance index (2)： Bis(trifluoromethanesulfon)imide ,  [DEME][TFSI]

Terms in the title (6)： 3D ,  ナノ多孔性 ,  グラフェン ,  捕獲 ,  フェルミ粒子 ,  電気特性