Art

J-GLOBAL ID：201602260477932734   Reference number：16A1340889

Removal and characterization of focused-ion-beam-induced damaged layer on single crystal diamond surface and application to multiple depth patterning

単結晶ダイヤモンド表面の集束イオンビーム誘発損傷層の除去と特性解析及び多種多様な深さパターン形成への応用

Author (6)： Kawasegi Noritaka (Central Research Institute, Toyama Industrial Technology Center, 150 Futagami-machi, Takaoka-shi, Toyama 933-0981, Japan) ,  Kuroda Seiya (Faculty of Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555, Japan) ,  Morita Noboru (Graduate School of Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba-shi, Chiba 263-8522, Japan) ,  Nishimura Kazuhito (Faculty of Engineering, Kogakuin University, 2665-1 Nakano-machi, Hachioji-shi, Tokyo 192-0015, Japan) ,  Yamaguchi Makoto (Graduate School of Engineering Science, Akita University, 1-1 Tegatagakuen-machi, Akita-shi, Akita 010-8502, Japan) ,  Takano Noboru (Graduate School of Science and Engineering for Research, University of Toyama, 3190 Gofuku, Toyama 930-8555, Japan)
Material： Diamond and Related Materials  (Diam Relat Mater)
Volume： 70  Page： 159-166  Publication year： Nov. 2016 
JST Material Number： W0498A  ISSN： 0925-9635  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *diamond ,  single crystal ,  *focused ion beam ,  gallium ,  ion beam machining ,  nanometer process ,  etching ,  heating ,  temperature dependence ,  pattern formation ,  depth ,  detector ,  damage and injury ,  removal ,  X-ray diffractometry ,  Raman spectroscopy ,  scanning optical microscope ,  topography ,  *characterization
Semi thesaurus term： *深さパターン形成 ,  *損傷層除去 ,  surface topography

Author keywords (6)： Single crystal diamond ,  Multiple depth patterning ,  Focused ion beam ,  Heat treatment ,  Gallium ion ,  Defect

JST classification (4)： Carbon and its compounds  (YB02060D) ,  Special machining  (QC04000Y) ,  Surface structure of semiconductors  (BK15030A) ,  Manufacturing technology of solid-state devices  (NC03030V)

Terms in the title (8)： 単結晶ダイヤモンド ,  集束イオンビーム ,  誘発 ,  損傷 ,  特性解析 ,  多種 ,  パターン形成 ,  応用