Art
J-GLOBAL ID：201602260870667705   Reference number：16A0726650

Large area flexible devices based on group-III nitrides

III族窒化物に基づく大面積フレキシブルデバイス【Powered by NICT】
Author (4)：
Fujioka Hiroshi

About Fujioka Hiroshi

(Institute of Industrial Science, The University of Tokyo, Japan)

About Institute of Industrial Science, The University of Tokyo, Japan

, 
Ueno Kohei

About Ueno Kohei

(Institute of Industrial Science, The University of Tokyo, Japan)

About Institute of Industrial Science, The University of Tokyo, Japan

, 
Kobayashi Atsushi

About Kobayashi Atsushi

(Institute of Industrial Science, The University of Tokyo, Japan)

About Institute of Industrial Science, The University of Tokyo, Japan

, 
Ohta Jitsuo

About Ohta Jitsuo

(Institute of Industrial Science, The University of Tokyo, Japan)

About Institute of Industrial Science, The University of Tokyo, Japan


Material：
IEEE Conference Proceedings  (IEEE Conf Proc)

About IEEE Conference Proceedings


Volume： 2016  Issue： CSW  Page： 1  Publication year： 2016 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
Abstract/Point：
Abstract/Point
Japanese summary of the article(about several hundred characters).
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We have fabricated various nit...
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Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
HEMT

About HEMT

, 
low temperature

About low temperature

, 
*nitride

About nitride

, 
MISFET

About MISFET

, 
Indium

About Indium

, 
adaptability

About adaptability

, 
solar cell

About solar cell

, 
metal foil

About metal foil

, 
single crystal

About single crystal

, 
interfacial reaction

About interfacial reaction

, 
growing temperature

About growing temperature

, 
low cost

About low cost

, 
*large area

About large area

, 
gallium indium nitride

About gallium indium nitride


Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
InGaN

About InGaN

, 
*フレキシブルデバイス

About フレキシブルデバイス

, 【Automatic Indexing@JST】
JST classification (9)：
JST classification
Category name(code) classified by JST.
Speach processing 
(JE05000E)

About Speach processing

,  Data protection 
(JD01020V)

About Data protection

,  Power converters 
(NB08030B)

About Power converters

,  Secondary batteries 
(YB04030K)

About Secondary batteries

,  Acoustic signal processing 
(BB03050C)

About Acoustic signal processing

,  Research and development 
(AA03000V)

About Research and development

,  Special-purpose arithmetic and control units 
(JC04030Y)

About Special-purpose arithmetic and control units

,  Solar cell 
(NC03084O)

About Solar cell

,  Artificial intelligence 
(JE08000Z)

About Artificial intelligence

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
III族

About III族

, 
窒化物

About 窒化物

, 
大面積

About 大面積

, 
フレキシブルデバイス

About フレキシブルデバイス


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