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J-GLOBAL ID:201602264008807155   Reference number:16A0486800

I-C and C-V Analysis of Fowler-Nordheim Stress Degradation of SiC-MOSFETs

I-V,C-V法を用いたSiC-MOSFET Fowler-Nordheimストレス劣化の解析
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Issue: 19  Page: 1-6  Publication year: Mar. 31, 2016 
JST Material Number: L5717A  Document type: Article
Article type: 短報  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Transistors 
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