Art

J-GLOBAL ID：201602268792029198   Reference number：16A1367015

Recent progress in compound semiconductor electron devices

化合物半導体電子デバイスの最近の進歩

Author (1)： Miyamoto Yasuyuki (Department of Electrical and Electronic Engineering, Tokyo Institute of Technology)
Material： IEICE Electronics Express (Web)  (IEICE Electron Express (Web))
Volume： 13  Issue： 18  Page： 20162002(J-STAGE)  Publication year： 2016 
JST Material Number： U0039A  ISSN： 1349-2543  Document type： Article
Article type： 文献レビュー  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *compound semiconductor ,  *solid state device ,  *mobility (ratio) ,  band gap ,  indium gallium arsenide ,  MOSFET ,  HBT ,  HEMT ,  wide band gap ,  *high mobility ,  *electron device
Semi thesaurus term： InGaAs ,  HBT ,  *electron device

Author keywords (4)： compound semiconductor ,  HBT ,  HEMT ,  MOSFET

JST classification (2)： Semiconductor-semiconductor contacts with Gr.13-15 element compounds  (BM03082Y) ,  Transistors  (NC03070N)

Reference (57)：

• [1] N. Hirose and M. Fukuda, “Numerical Wind Tunnel (NWT) and CFD research at National Aerospace Laboratory,” HPC Asia ’97 (DOI: 10.1109/HPC.1997.592130).
• [2] T. Mimura: “Development of high electron mobility transistor,” Jpn. J. Appl. Phys. 44 (2005) 8263 (DOI: 10.1143/JJAP.44.8263).
• [3] M. Fresina: “Trends in GaAs HBTs for wireless and RF,” BTCM (2011) 150 (DOI: 10.1109/BCTM.2011.6082769).
• [4] H. Kroemer: “Heterostructure bipolar transistors and integrated circuits,” Proc. IEEE 70 (1982) 13 (DOI: 10.1109/PROC.1982.12226).
• [5] Y. Kusakariet al.: “Development of high efficiency RF power MOSFET for GSM cellular phone system,” Trans. IEICE E85-C (2002) 1436.

Terms in the title (2)： 化合物半導体 ,  電子デバイス