Art

J-GLOBAL ID：201602276202348771   Reference number：16A1271812

Fabrication and Thermoelectric Properties of Cu-doped Bi-Te-Se Bulk Materials

CuドープBi-Te-Seバルク材料の作製および熱電特性

Author (5)： WANG Zhi-Lei (Department of Mechanical and Aerospace Engineering, Graduate School of Engineering, Tottori University) ,  YOKOYAMA Yuki (Department of Mechanical and Aerospace Engineering, Graduate School of Engineering, Tottori University) ,  AKAO Takahiro (Department of Mechanical and Aerospace Engineering, Graduate School of Engineering, Tottori University) ,  ONDA Tetsuhiko (Department of Mechanical and Aerospace Engineering, Graduate School of Engineering, Tottori University) ,  CHEN Zhong-Chun (Department of Mechanical and Aerospace Engineering, Graduate School of Engineering, Tottori University)
Material： 粉体および粉末冶金  (Journal of the Japan Society of Powder and Powder Metallurgy)
Volume： 63  Issue： 7  Page： 613-617(J-STAGE)  Publication year： 2016 
JST Material Number： F0691A  ISSN： 0532-8799  CODEN： FOFUA2  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Abstract/Point： Dense n-type Bi₂Te<...

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Thesaurus term： *thermoelectric material ,  electrical characteristic ,  *selenide(chalcogenide) ,  bismuth compound ,  tellurium compound ,  doping ,  copper ,  N-type semiconductor ,  mechanical alloying ,  grinding and milling ,  spark plasma sintering ,  *micro structure ,  crystal structure ,  heating temperature ,  carrier density ,  transport coefficient ,  performance index ,  X-ray diffractometry ,  electron microscopy ,  electron probe microanalysis ,  pole figure ,  electrical resistivity
Semi thesaurus term： *thermoelectric characteristic ,  mechanical milling ,  microstructure ,  sintering temperature ,  carrier concentration ,  Seebeck coefficient ,  performance factor ,  Microscopy, Electron, Scanning ,  Electron Probe Microanalysis

Author keywords (5)： bismuth telluride ,  Cu doping ,  thermoelectric properties ,  mechanical alloying ,  spark plasma sintering

JST classification (1)： Thermoelectric devices  (NC03090J)

Reference (19)：

• 1) J. T. Im, K. T. Hartwig, et al.: “Microstructural refinement of cast p-type Bi₂Te₃-Sb₂Te₃ by equal channel angular extrusion ”, Acta Mater., 52 (2004) 49-55.
• 2) P. J. Taylor, J. R. Maddux, et al.: “Room-temperature anisotropic, thermoelectric, and electrical properties...”, J. Appl. Phys., 85 (1999) 7807-7813.
• 3) W. M. Yim, F. D. Rosi: “Compound tellurides and their alloys for peltier cooling-A review”, Solid-State Electron., 15 (1972) 1121.
• 4) J. Y. Yang, T. Aizawa, et al.: “Thermoelectric properties of n-type (Bi₂Se₃)_x(Bi₂Te₃)_1-x prepared by bulk mechanical alloying and hot pressing”, J. Alloys Compd., 312 (2000) 326-330.
• 5) Y. Nagami, K. Matsuoka, et al.: “Preparation and Characterization of Bi_0.4Sb_1.6Te₃ Bulk Thermoelectric Materials”, J. Electron. Mater., 43 (2014) 2262-2268.

Terms in the title (8)： Cu ,  ドープ ,  Bi ,  Te ,  Se ,  バルク材料 ,  作製 ,  熱電特性