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J-GLOBAL ID：201602276308733154   Reference number：16A0660448

Epitaxial growth and electrochemical transfer of graphene on Ir(111)/α-Al₂O₃(0001) substrates

Ir(111)/α-Al₂O₃(0001)基板上のグラフェンのエピタキシャル成長と電気化学的転写

Author (4)： Koh Shinji (Department of Electrical Engineering and Electronics, College of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo-ku, Sagamihara, Kanagawa 252-5258, Japan) ,  Saito Yuta (Department of Electrical Engineering and Electronics, College of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo-ku, Sagamihara, Kanagawa 252-5258, Japan) ,  Kodama Hideyuki (Department of Electrical Engineering and Electronics, College of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo-ku, Sagamihara, Kanagawa 252-5258, Japan) ,  Sawabe Atsuhito (Department of Electrical Engineering and Electronics, College of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo-ku, Sagamihara, Kanagawa 252-5258, Japan)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 109  Issue： 2  Page： 023105-023105-4  Publication year： Jul. 11, 2016 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： Low-pressure chemical vapor de...

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Thesaurus term： iridium ,  aluminum oxide ,  *graphene ,  *epitaxy ,  X-ray diffraction ,  Raman spectroscopy ,  reflection electron diffraction ,  treatment ,  *transcription ,  organic semiconductor
Semi thesaurus term： *epitaxial growth ,  Electrochemical treatment

JST classification (1)： Thin films of organic compounds  (BK14070L)

Terms in the title (6)： Ir ,  α-AL2O3 ,  グラフェン ,  エピタキシャル成長 ,  電気化学 ,  転写