Art

J-GLOBAL ID：201602277323834917   Reference number：16A0650735

Improvement of Thermal Tolerance of CoFeB-MgO Perpendicular-Anisotropy Magnetic Tunnel Junctions by Controlling Boron Composition

ほう素組成によるCoFeB-MgO垂直異方性磁気トンネル接合の熱耐性の改善【Powered by NICT】

Author (16)： Honjo H. (Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai, Japan) ,  Ikeda S. (Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai, Japan) ,  Sato H. (Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai, Japan) ,  Sato S. (Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai, Japan) ,  Watanabe T. (Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai, Japan) ,  Miura S. (Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai, Japan) ,  Nasuno T. (Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai, Japan) ,  Noguchi Y. (Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai, Japan) ,  Yasuhira M. (Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai, Japan) ,  Tanigawa T. (Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai, Japan) ,  Koike H. (Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai, Japan) ,  Muraguchi M. (Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai, Japan) ,  Niwa M. (Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai, Japan) ,  Ito K. (Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai, Japan) ,  Ohno H. (Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai, Japan) ,  Endoh T. (Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai, Japan)
Material： IEEE Transactions on Magnetics  (IEEE Trans Magn)
Volume： 52  Issue： 7  Page： ROMBUNNO.3401104.1-4  Publication year： 2016 
JST Material Number： A0339B  ISSN： 0018-9464  CODEN： IEMGAQ  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： We investigated annealing temp...

Register(free) or Log In to access     To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=16A0650735&from=J-GLOBAL&jstjournalNo=A0339B") }}

Thesaurus term： interface (surface) ,  annealing (heat treatment) ,  *anisotropy ,  saturation magnetization ,  magnetic property ,  *boron ,  electron energy loss spectroscopy ,  *heat resistance ,  *magnesium oxide ,  annealing temperature ,  *magnetic tunnel junction
Semi thesaurus term： トンネル磁気抵抗 , 【Automatic Indexing@JST】

JST classification (2)： Metal-insulator-metal structures  (BM03087F) ,  Magnetoelectric devices  (NC03100X)

Terms in the title (7)： ほう素 ,  組成 ,  MgO ,  垂直 ,  異方性 ,  磁気トンネル接合 ,  熱耐性