Art

J-GLOBAL ID：201602285384020333   Reference number：16A1366891

Efficiency Analysis of SiC-MOSFET-Based Bidirectional Isolated DC/DC Converters

SiC MOSFETベース双方向性分離DC/DCコンバータの効率分析

Author (8)： SAITO Atsushi (Graduate School of Advanced Sciences of Matter, Hiroshima University) ,  SATO Kenshiro (Graduate School of Advanced Sciences of Matter, Hiroshima University) ,  TANIMOTO Yuta (Graduate School of Advanced Sciences of Matter, Hiroshima University) ,  MATSUURA Kai (Graduate School of Advanced Sciences of Matter, Hiroshima University) ,  SASAKI Yutaka (Graduate School of Engineering, Hiroshima University) ,  MIURA-MATTAUSCH Mitiko (Graduate School of Advanced Sciences of Matter, Hiroshima University) ,  MATTAUSCH Hans Juergen (Graduate School of Advanced Sciences of Matter, Hiroshima University) ,  ZOKA Yoshifumi (Graduate School of Engineering, Hiroshima University)
Material： IEICE Transactions on Electronics (Web)  (IEICE Trans Electron (Web))
Volume： E99.C  Issue： 9  Page： 1065-1070(J-STAGE)  Publication year： 2016 
JST Material Number： U0468A  ISSN： 1745-1353  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *DC-DC converter ,  semiconductor device ,  *MOSFET ,  *performance analysis ,  property ,  efficiency ,  carrier mobility ,  transformer (signal) ,  inductance ,  optimization ,  conversion efficiency ,  modification
Semi thesaurus term： SiC ,  *performance analysis ,  bidirectional ,  performance analysis

Author keywords (6)： circuit simulation ,  compact model ,  DC/DC converter ,  SiC-MOSFET ,  optimization ,  conversion efficiency

JST classification (3)： Transistors  (NC03070N) ,  Semiconductor integrated circuit  (NC03162T) ,  Power converters  (NB08030B)

Reference (15)：

• [1] H. Ohashi and I. Omura, “Role of simulation technology for the progress in power devices and their applications,” IEEE Trans. Electron Devices, vol.60, no.2, pp.528-534, Feb. 2013.
• [2] R.L. Steigerwald, R.W. De Doncker, and M.H. Kheraluwala, “A comparison of high-power DC-DC soft-switched converter topologies,” IEEE Trans. Industry Application, vol.32, no.5, pp.1139-1145, Sept. 1996.
• [3] T. Yamagishi, H. Akagi, S. Kinouchi, Y. Miyazaki, and M. Koyama, “A 750-V, 100-kW, 20-kHz bidirectional isolated DC/DC converter using SiC-MOSFET/SBD modules,” IEEJ Trans. Industry Application, vol.134, no.5, pp.544-553, 2014.
• [4] Y.P. Tsividis, Operation and modeling of the MOS transistors, McGraw-Hill Book Company, 1987.
• [5] M. Miura-Mattausch, H.J. Mattausch, and T. Ezaki, The physics and modeling of MOSFETs, World Scientific, Singapore, 2008.

Terms in the title (6)： SiC ,  MOSFET ,  双方向性 ,  DC ,  コンバータ ,  効率分析