Rchr
J-GLOBAL ID:201701006166792532   Update date: Apr. 11, 2024

Shima Kohei

シマ コウヘイ | Shima Kohei
Affiliation and department:
Job title: Associate professor
Homepage URL  (1): https://www.scopus.com/authid/detail.uri?authorId=55365156000
Research field  (4): Applied physics - general ,  Crystal engineering ,  Chemical reaction and process system engineering ,  Material fabrication and microstructure control
Research keywords  (20): Boron nitride ,  2D materials ,  Deep-ultraviolet (DUV) light emitter ,  Vapor-phase epitaxy ,  Ammonothermal method ,  Spatio-time-resolved cathodoluminescence ,  Vacancy-type defects ,  Ion implantation ,  III-N semiconductor ,  Polariton laser ,  Exciton ,  Wide-bandgap semiconductor ,  Opto-electronics ,  Chemical vapor infiltration ,  SiC/SiC Ceramic matrix composites (CMCs) ,  Fiber Reinforced Ceramic ,  Atomic layer deposition ,  Chemical vapor deposition ,  Metallization ,  ULSI Cu interconnects
Research theme for competitive and other funds  (13):
  • 2023 - 2025 グラファイト型層状窒化ホウ素の気相合成と光電子素子材料としての物性解明
  • 2022 - 2025 六方晶および閃亜鉛鉱構造窒化ホウ素の高温気相エピタキシャル成長と導電性制御
  • 2021 - 2024 ZnO微小共振器への電流注入による室温ポラリトンレーザ発振
  • 2022 - 2023 ZnO微小共振器による室温ポラリトンレーザ発振の実証
  • 2020 - 2022 六方晶窒化ボロン半導体の直接遷移型化と深紫外励起子発光ダイナミクスの研究
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Papers (49):
  • S. F. Chichibu, K. Shima, A. Uedono, S. Ishibashi, H. Iguchi, T. Narita, K. Kataoka, R. Tanaka, S. Takashima, K. Ueno, et al. Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers. Journal of Applied Physics. 2024
  • K. Shima, K. Kurimoto, Q. Bao, Y. Mikawa, A. Uedono, S. Ishibashi, T. Ishiguro, S. F. Chichibu. Improved nonradiative recombination lifetimes in bulk GaN crystals grown by the low-pressure acidic ammonothermal method. Applied Physics Letters. 2024
  • A. Uedono, R. Tanaka, S. Takashima, K. Ueno, M. Edo, K. Shima, S. F. Chichibu, J. Uzuhashi, T. Ohkubo, S. Ishibashi, et al. Vacancy-type defects and their trapping/detrapping of charge carriers in ion-implanted GaN studied by positron annihilation. Physica Status Solidi B. 2024. 261. 2400060-1-10
  • K. Shima, T. S. Cheng, C. J. Mellor, P. H. Beton, C. Elias, P. Valvin, B. Gil, G. Cassabois, S. V. Novikov, S. F. Chichibu. Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride. Scientific Reports. 2024. 14. 169-1-8
  • T. Onuma, K. Kudo, M. Ono, W. Kosaka, K. Shima, K. Ishii, K. Kaneko, Y. Ota, T. Yamaguchi, K. Kojima, et al. Steady-state and dynamic characteristics of deep UV luminescence in rocksalt-structured MgxZn1-xO. Journal of Applied Physics. 2023. 134. 2. 025102-1-11
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Patents (6):
  • Method of producing a silicon compound material and apparatus for producing a silicon compound material
  • Heat-resistant composite material production method and production device
  • Heat-resistant composite material production method and production device
  • 耐熱複合材料の製造方法及び製造装置
  • 耐熱複合材料の製造方法及び製造装置
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Books (2):
  • 全方位フォトルミネセンス(ODPL)分光法を用いたGaN自立結晶の評価
    S&T出版「次世代パワーエレクトロニクスの課題と評価技術」 2022 ISBN:9784907002930
  • 大口径・高純度GaN単結晶基板の量産法と結晶評価
    S&T出版「次世代パワーエレクトロニクスの課題と評価技術」 2022 ISBN:9784907002930
Lectures and oral presentations  (229):
  • 275 nm 帯AlGaN 量子井戸LED の初期劣化機構(II)
    (第71回応用物理学会春季学術講演会 2024)
  • BCl3/NH3を用いてサファイア基板上にCVD成長させたhBN薄膜および多形BNセグメントの陰極線蛍光評価
    (第71回応用物理学会春季学術講演会 2024)
  • GaN 成長層・Mg イオン注入層の室温フォトルミネッセンス寿命 (III)
    (第71回応用物理学会春季学術講演会 2024)
  • GaN 成長層・Mg イオン注入層の室温フォトルミネッセンス寿命 (II)
    (第71回応用物理学会春季学術講演会 2024)
  • 低圧酸性アモノサーマル成長GaNのミッドギャップ再結合過程
    (第71回応用物理学会春季学術講演会 2024)
more...
Works (1):
  • Microchannels: High-Aspect-Ratio Parallel-Plate Microchannels Applicable to Kinetic Analysis of Chemical Vapor Deposition
    Kohei Shima, Yuichi Funato, Hidetoshi Sugiura, Noboru Sato, Yasuyuki Fukushima, Takeshi Momose, Yukihiro Shimogaki 2016 - 現在
Education (3):
  • - 2017 The University of Tokyo Graduate School, Division of Engineering Department of Materials Engineering
  • - 2013 The University of Tokyo Graduate School, Division of Engineering Department of Materials Engineering
  • - 2011 The University of Tokyo Faculty of Engineering Department of Materials Engineering
Professional career (3):
  • PhD (Engineering) (The University of Tokyo)
  • Master (The University of Tokyo)
  • Bachelor (The University of Tokyo)
Work history (10):
  • 2023/04 - 現在 Tohoku University Institute of Multidisciplinary Research for Advanced Materials Division of Measurements Associate professor
  • 2018/08 - 2023/03 Tohoku University Institute of Multidisciplinary Research for Advanced Materials Division of Measurements Research associate
  • 2017/04 - 2018/07 Tohoku University Institute of Multidisciplinary Research for Advanced Materials Division of Measurements Posdoc
  • 2013/04 - 2017/03 PhD course, Department of Materials Engineering, School of Engineering, The University of Tokyo
  • 2012/10 - 2017/03 The University of Tokyo, The Materials Education Program for the Future Leaders in Research, Industry, and Technology (MERIT), The Japan Society for the Promotion of Science through the Program for Leading Graduate Schools
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Awards (7):
  • 2023/03 - トーキン科学技術振興財団 第33回(令和4年度)トーキン財団奨励賞 室温で共振器ポラリトンを呈するチップサイズ酸化亜鉛微小共振器の実現
  • 2021/07 - The Japan Society of Applied Physics 43rd JSAP Outstanding Paper Award 2021, JSAP Paper Award Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures
  • 2019/07 - The 13th International Conference on Nitride Semiconductors (ICNS-13) Best poster Award Evaluation of Subsequent Implantation Effect into Mg Implanted Region in GaN
  • 2019/06 - 19th International Workshop on Junction Technology (IWJT2019) Best Paper Award "Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes"
  • 2015/12 - COMSOL Conference Tokyo 2015優秀ポスター賞 微細溝への薄膜堆積における溝内膜厚分布の時間変化の可視化
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Association Membership(s) (3):
The Japanese Association for Crystal Growth ,  The Japan Society of Applied Physics ,  The Society of Chemical Engineers, Japan
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