Art
J-GLOBAL ID:201702211341173460   Reference number:17A1955659

Quantification of Surface Electron Trapping of GaN Transistors by Using Operando Soft X-ray Photoelectron Nanospectroscopy

Operando軟X線光電子ナノ分光法を利用することによるGaNトランジスタの表面電子トラッピングの定量
Author (12):
Material:
Volume: 8th  Page: ROMBUNNO.6pA2-3  Publication year: 2017 
JST Material Number: L8395B  Document type: Proceedings
Article type: 短報  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

Semi thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

JST classification (4):
JST classification
Category name(code) classified by JST.
Transistors  ,  Salts  ,  Electrical properties of interfaces in general  ,  Electron spectroscopy 

Return to Previous Page