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J-GLOBAL ID:201702213438570159   Reference number:17A1727311

Analysis of quasi-ballistic hole transport capability of Ge and Si nanowire pMOSFETs by a quantum-corrected Boltzmann transport equation

量子補正されたBoltzmann輸送方程式によるGeとSiナノワイヤpMOSFETの準バリスティック正孔輸送能力の解析【Powered by NICT】
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Volume: 2017  Issue: SISPAD  Page: 277-280  Publication year: 2017 
JST Material Number: W2441A  Document type: Proceedings
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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The quasi-ballistic hole trans...
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Transistors 

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