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J-GLOBAL ID：201702214127769372   Reference number：17A1465183

Effects of carbon coverage on Ge quantum dots formation on Si(100) using C-Si reaction and transition of Ge growth mode

Ge成長モードのC-Si反応と遷移を用いたSi(100)上のGe量子ドットの形成に及ぼす炭素被覆の影響【Powered by NICT】

Author (6)： Yasuta Kosuke (Graduate School of Engineering, Tohoku University, 6-6-05, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan) ,  Itoh Yuhki (Graduate School of Engineering, Tohoku University, 6-6-05, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan) ,  Itoh Yuhki (Division for International Advanced Research and Education (DIARE), Tohoku University, 6-3, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8578, Japan) ,  Itoh Yuhki (Japan Society for the Promotion of Science Research Fellow for Young Scientists, Kojimachi Business Center Building, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083, Japan) ,  Kawashima Tomoyuki (Graduate School of Engineering, Tohoku University, 6-6-05, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan) ,  Washio Katsuyoshi (Graduate School of Engineering, Tohoku University, 6-6-05, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan)
Material： Materials Science in Semiconductor Processing  (Mater Sci Semicond Process)
Volume： 70  Page： 173-177  Publication year： 2017 
JST Material Number： W1055A  ISSN： 1369-8001  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Abstract/Point： Effects of carbon (C) coverage...

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Thesaurus term： surface energy ,  *covering ,  nano crystal ,  *quantum dot ,  Raman spectroscopy ,  MBE growth ,  *germanium ,  graphite ,  X-ray photoelectron spectroscopy ,  monomolecular layer ,  *silicon ,  surface reconstruction
Semi thesaurus term： 濡れ層 ,  *シリコン(100) ,  *成長モード , 【Automatic Indexing@JST】

Author keywords (6)： Germanium ,  Quantum dots ,  Silicon ,  Carbon ,  Molecular beam epitaxy (MBE) ,  X-ray photoelectron spectroscopy

JST classification (3)： Materials of solid-state devices  (NC03020K) ,  Photodetectors  (NC03083X) ,  Luminescence of semiconductors  (BM08092S)

Terms in the title (6)： Ge ,  成長モード ,  Si ,  遷移 ,  量子ドット ,  炭素被覆