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J-GLOBAL ID：201702217810916406   Reference number：17A1557625

Suppression of twin generation in the growth of GaAs on Ge (111) substrates

Ge(111)基板上のGaAsの成長における双晶発生の抑制【Powered by NICT】

Author (7)： Kajikawa Y. (Department of Electric and Control Systems Engineering, Interdisciplinary Faculty of Science and Engineering, Shimane University, Matsue 690-8504, Japan) ,  Son Y. (Department of Electric and Control Systems Engineering, Interdisciplinary Faculty of Science and Engineering, Shimane University, Matsue 690-8504, Japan) ,  Hayase H. (Department of Electric and Control Systems Engineering, Interdisciplinary Faculty of Science and Engineering, Shimane University, Matsue 690-8504, Japan) ,  Ichiba H. (Department of Electric and Control Systems Engineering, Interdisciplinary Faculty of Science and Engineering, Shimane University, Matsue 690-8504, Japan) ,  Mori R. (Department of Electric and Control Systems Engineering, Interdisciplinary Faculty of Science and Engineering, Shimane University, Matsue 690-8504, Japan) ,  Ushirogouchi K. (Department of Electric and Control Systems Engineering, Interdisciplinary Faculty of Science and Engineering, Shimane University, Matsue 690-8504, Japan) ,  Irie M. (Department of Electric and Control Systems Engineering, Interdisciplinary Faculty of Science and Engineering, Shimane University, Matsue 690-8504, Japan)
Material： Journal of Crystal Growth  (J Cryst Growth)
Volume： 477  Page： 40-44  Publication year： 2017 
JST Material Number： B0942A  ISSN： 0022-0248  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： The generation of rotational t...

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Thesaurus term： MBE growth ,  buffer layer ,  gallium antimonide ,  vicinal surface ,  *gallium arsenide ,  X-Ray Diffraction ,  *twin ,  characterization

Author keywords (6)： A1.Volume defects ,  A1. X-ray diffraction ,  A3. Molecular beam epitaxy ,  B2. Semiconducting gallium arsenide ,  B2. Semiconducting III-V materials ,  B3. Solar cells

JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (4)： Ge ,  GaAs ,  成長 ,  双晶