Art

J-GLOBAL ID：201702218706254523   Reference number：17A1465174

Tensile strain ultra thin body SiGe on insulator through hetero-layer transfer technique

ヘテロ層移動法による絶縁体上の引張歪超薄体SiGe【Powered by NICT】

Author (6)： Chang Wen Hsin (National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan) ,  Hattori Hiroyuki (National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan) ,  Ishii Hiroyuki (National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan) ,  Irisawa Toshifumi (National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan) ,  Uchida Noriyuki (National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan) ,  Maeda Tatsuro (National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan)
Material： Materials Science in Semiconductor Processing  (Mater Sci Semicond Process)
Volume： 70  Page： 123-126  Publication year： 2017 
JST Material Number： W1055A  ISSN： 1369-8001  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Abstract/Point： The ultra thin body (UTB) SiGe...

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Thesaurus term： *Germanium ,  *insulator ,  MOSFET ,  wet etching ,  Raman spectroscopy ,  *tensile strain
Semi thesaurus term： nMOSFET ,  ゲート長 ,  SGOI ,  *シリコンゲルマニウム , 【Automatic Indexing@JST】

Author keywords (6)： SiGe ,  SGOI ,  Strain ,  Layer transfer ,  UTB ,  MOSFETs

JST classification (5)： Materials of solid-state devices  (NC03020K) ,  Solar cell  (NC03084O) ,  Oxide thin films  (BK14050P) ,  Semiconductor thin films  (BK14040E) ,  Measurement,testing and reliability of solid-state devices  (NC03040G)

Terms in the title (3)： 絶縁体 ,  引張歪 ,  SiGe