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J-GLOBAL ID：201702229263460628   Reference number：17A1829905

A Magnetoresistance Induced by a Nonzero Berry Phase in GeTe/Sb₂Te₃ Chalcogenide Superlattices

GeTe/Sb_2Te_3カルコゲン化物超格子における非零Berry位相による磁気抵抗【Powered by NICT】

Author (8)： Tominaga Junji (Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba, 305-8565, Japan) ,  Saito Yuta (Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba, 305-8565, Japan) ,  Mitrofanov Kirill (Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba, 305-8565, Japan) ,  Inoue Nobuki (Research Center of Computational Design of Advanced Functional Materials, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, 305-8568, Japan) ,  Fons Paul (Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba, 305-8565, Japan) ,  Kolobov Alexander V. (Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba, 305-8565, Japan) ,  Nakamura Hisao (Research Center of Computational Design of Advanced Functional Materials, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, 305-8568, Japan) ,  Miyata Noriyuki (Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba, 305-8565, Japan)
Material： Advanced Functional Materials  (Adv Funct Mater)
Volume： 27  Issue： 40  Page： ROMBUNNO.201702243  Publication year： 2017 
JST Material Number： W1336A  ISSN： 1616-301X  CODEN： AFMDC6  Document type： Article
Article type： 原著論文  Country of issue： Germany, Federal Republic of (DEU)  Language： ENGLISH (EN)

Abstract/Point： The chalcogenide alloy Ge-Sb-T...

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Thesaurus term： external magnetic field ,  structural phase transition ,  doping ,  periodic structure ,  magnetic property ,  *superlattice ,  impurity ,  *magnetic reluctance ,  *magnetics ,  recording material ,  *chalcogenide ,  alloy ,  circular plate ,  polarity
Semi thesaurus term： *GeTe , 【Automatic Indexing@JST】

Author keywords (5)： anomalous Hall effect ,  Berry phase ,  chalcogenide superlattice ,  magnetoresistance ,  phase change memory

JST classification (2)： Manufacturing of ceramics and ceramic whiteware  (YC03020V) ,  Oxide thin films  (BK14050P)

Terms in the title (5)： GeTe ,  カルコゲン化物 ,  超格子 ,  Berry位相 ,  磁気抵抗