Art

J-GLOBAL ID：201702234486896963   Reference number：17A1238009

Quasiequilibrium crystal shape and kinetic Wulff plot for GaN grown by trihalide vapor phase epitaxy using GaCl₃

GaCl_3を用いた三ハロゲン化物気相エピタクシーによって成長させたGaNのための準平衡結晶形状と運動学的Wulffプロット【Powered by NICT】

Author (5)： Iso Kenji (Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16, Nakamachi, Koganei, Tokyo 184-8588,, Japan) ,  Matsuda Karen (Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16, Nakamachi, Koganei, Tokyo 184-8588,, Japan) ,  Takekawa Nao (Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16, Nakamachi, Koganei, Tokyo 184-8588,, Japan) ,  Murakami Hisashi (Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16, Nakamachi, Koganei, Tokyo 184-8588,, Japan) ,  Koukitu Akinori (Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16, Nakamachi, Koganei, Tokyo 184-8588,, Japan)
Material： Physica Status Solidi. B. Basic Solid State Physics  (Phys Status Solidi B Basic Solid State Phys)
Volume： 254  Issue： 8  Page： null  Publication year： 2017 
JST Material Number： C0599A  ISSN： 0370-1972  CODEN： PSSBBD  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： We demonstrated the selective-...

Register(free) or Log In to access     To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=17A1238009&from=J-GLOBAL&jstjournalNo=C0599A") }}

Thesaurus term： facet ,  *crystal ,  high temperature ,  rate theory ,  nonpolarity ,  *vapor phase growth ,  growth rate ,  polarity ,  *Gallium ,  *gallium nitride ,  semipolar
Semi thesaurus term： SEM画像 , 【Automatic Indexing@JST】

Author keywords (3)： GaN ,  selective-area growth ,  vapor phase epitaxy

JST classification (4)： Luminescence of semiconductors  (BM08092S) ,  Excitons  (BM02120E) ,  Solid phase transitions  (BL04020G) ,  Semiconductor thin films  (BK14040E)

Terms in the title (8)： 三ハロゲン化物 ,  気相エピタクシー ,  成長 ,  GaN ,  準平衡 ,  結晶形 ,  運動学 ,  プロット