Art

J-GLOBAL ID：201702235384950416   Reference number：17A1019957

Crystallization kinetics in Si-1at%Sn during rapid solidification in undercooled melt

過冷却融液の急冷凝固中のSi1at%Snの結晶化動力学【Powered by NICT】

Author (6)： Kuribayashi K. (ISAS/JAXA, Sagamihara, Kanagawa, Japan) ,  Kuribayashi K. (Chiba Institute of Technology, Narashino, Chiba, Japan) ,  Kuribayashi K. (Shibaura Institute of Technology, Koto, Tokyo, Japan) ,  Ozawa S. (Chiba Institute of Technology, Narashino, Chiba, Japan) ,  Nagayama K. (Shibaura Institute of Technology, Koto, Tokyo, Japan) ,  Inatomi Y. (ISAS/JAXA, Sagamihara, Kanagawa, Japan)
Material： Journal of Crystal Growth  (J Cryst Growth)
Volume： 468  Page： 73-78  Publication year： 2017 
JST Material Number： B0942A  ISSN： 0022-0248  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： In order to elucidate the caus...

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Thesaurus term： twin ,  dendrite (crystal) ,  *undercooling ,  *crystallization ,  nucleation ,  two dimension ,  particle size (diameter) ,  morphology (form) ,  crystal growth ,  *silicon ,  doping ,  *rapid solidification ,  interface (surface) ,  morphology ,  *melt

Author keywords (6)： A1. Dendrites ,  A2. Growth from melt ,  B2. Semiconducting silicon ,  Growth mode ,  Nucleation ,  Solidification

JST classification (1)： Crystal growth of semiconductors  (BK13040X)

Terms in the title (4)： 過冷却 ,  融液 ,  急冷凝固 ,  結晶化動力学