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J-GLOBAL ID：201702237411574108   Reference number：17A0118457

Oxygen plasma treated graphene/InN nanowire heterojunction based sensors for toxic gas detection

有毒ガス検出のための酸素プラズマ処理したグラフェン/InNナノワイヤヘテロ接合に基づくセンサ【Powered by NICT】

Author (5)： Jahangir Ifat (Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA) ,  Wilson Alina (Department of Engineering Technology, Midlands Technical College, Columbia, SC 29203, USA) ,  Uddin Md. Ahsan (Department of Electrical and Computer Engineering, Clemson University, Clemson, SC 29634, USA) ,  Chandrashekhar M V S (Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA) ,  Koley Goutam (Department of Electrical and Computer Engineering, Clemson University, Clemson, SC 29634, USA)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2016  Issue： SENSORS  Page： 1-3  Publication year： 2016 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： In this work, graphene/InN nan...

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Thesaurus term： rectification(electric) ,  *heterojunction ,  Schottky barrier ,  retention time ,  *graphene ,  surface charge ,  *nanowire ,  doping ,  diode ,  *hazardous gas
Semi thesaurus term： 機能性 ,  バックゲート ,  シリコンウエハ ,  ヘテロ構造 ,  *酸素プラズマ , 【Automatic Indexing@JST】

JST classification (5)： Manufacturing technology of solid-state devices  (NC03030V) ,  Semiconductor thin films  (BK14040E) ,  Transistors  (NC03070N) ,  Piezoelectricity,pyroelectricity,electret  (BM05040M) ,  Materials of solid-state devices  (NC03020K)

Terms in the title (6)： 有毒ガス ,  酸素プラズマ ,  グラフェン ,  InN ,  ナノワイヤ ,  ヘテロ接合